Inventor · disambiguated record
Prashant B. Phatak
Also filed as: PHATAK PRASHANT · PHATAK PRASHANT B
90 granted patents·13 pending applications·769 citations·filing 2000–2016
99Inventor score
Files withINTERMOLECULAR INC74PHATAK PRASHANT6MILLER MICHAEL5CHIANG TONY2CYPRESS SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
103 records- 0198US7629198B2Methods for forming nonvolatile memory elements with resistive-switching metal oxidesINTERMOLECULAR INC·Filed 2007·Granted Dec 8, 2009·118 cites·40 claims
- 0297US8183553B2Resistive switching memory element including doped silicon electrodePHATAK PRASHANT·Filed 2009·Granted May 22, 2012·135 cites·20 claims
- 0397US7824935B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2008·Granted Nov 2, 2010·25 cites·8 claims
- 0496US8981327B1Carbon-doped silicon based selector elementINTERMOLECULAR INC·Filed 2013·Granted Mar 17, 2015·18 cites·19 claims
- 0596US8766234B1Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacksINTERMOLECULAR INC·Filed 2012·Granted Jul 1, 2014·28 cites·20 claims
- 0696US8072795B1Biploar resistive-switching memory with a single diode per memory cellWANG YUN·Filed 2009·Granted Dec 6, 2011·39 cites·13 claims
- 0795US8294219B2Nonvolatile memory element including resistive switching metal oxide layersMALHOTRA SANDRA G·Filed 2008·Granted Oct 23, 2012·39 cites·15 claims
- 0895US8062918B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2008·Granted Nov 22, 2011·23 cites·23 claims
- 0994US7960216B2Confinement techniques for non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2009·Granted Jun 14, 2011·21 cites·8 claims
- 1093US8420478B2Controlled localized defect paths for resistive memoriesCHIANG TONY·Filed 2009·Granted Apr 16, 2013·17 cites·16 claims
- 1193US8129704B2Non-volatile resistive-switching memoriesPHATAK PRASHANT·Filed 2008·Granted Mar 6, 2012·20 cites·3 claims
- 1293US8053364B2Closed-loop sputtering controlled to enhance electrical characteristics in deposited layerINTERMOLECULAR INC·Filed 2008·Granted Nov 8, 2011·18 cites·11 claims
- 1391US9246092B1Tunneling barrier creation in MSM stack as a selector device for non-volatile memory applicationINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·8 cites·14 claims
- 1491US8975610B1Silicon based selector elementINTERMOLECULAR INC·Filed 2013·Granted Mar 10, 2015·9 cites·2 claims
- 1591US8465996B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2012·Granted Jun 18, 2013·9 cites·20 claims
- 1691US8008096B2ALD processing techniques for forming non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2009·Granted Aug 30, 2011·16 cites·20 claims
- 1790US9362497B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2015·Granted Jun 7, 2016·6 cites·18 claims
- 1890US8648418B2Controlled localized defect paths for resistive memoriesINTERMOLECULAR INC·Filed 2013·Granted Feb 11, 2014·7 cites·20 claims
- 1990US8274066B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2011·Granted Sep 25, 2012·7 cites·12 claims
- 2089US8551809B2Reduction of forming voltage in semiconductor devicesKUMAR PRAGATI·Filed 2009·Granted Oct 8, 2013·16 cites·18 claims
- 2189US8298891B1Resistive-switching memory elementCHIANG TONY·Filed 2009·Granted Oct 30, 2012·8 cites·7 claims
- 2289US8049305B1Stress-engineered resistance-change memory deviceINTERMOLECULAR INC·Filed 2009·Granted Nov 1, 2011·15 cites·20 claims
- 2388US8872151B2Surface treatment to improve resistive-switching characteristicsINTERMOLECULAR INC·Filed 2013·Granted Oct 28, 2014·5 cites·14 claims
- 2487US9343523B2Selector device using low leakage dielectric MIMCAP diodeINTERMOLECULAR INC·Filed 2015·Granted May 17, 2016·4 cites·17 claims
- 2586US9070867B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2014·Granted Jun 30, 2015·5 cites·20 claims
- 2686US8654560B2Variable resistance memory with a select deviceDEWEERD WIM·Filed 2011·Granted Feb 18, 2014·8 cites·13 claims
- 2786US8318534B2Non-volatile resistive-switching memories formed using anodizationGORER ALEXANDER·Filed 2011·Granted Nov 27, 2012·7 cites·20 claims
- 2885US8143619B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateVERMA GAURAV·Filed 2010·Granted Mar 27, 2012·4 cites·6 claims
- 2985US7977152B2Non-volatile resistive-switching memories formed using anodizationINTERMOLECULAR INC·Filed 2009·Granted Jul 12, 2011·9 cites·7 claims
- 3084US8872268B2Controlled localized defect paths for resistive memoriesINTERMOLECULAR INC·Filed 2014·Granted Oct 28, 2014·4 cites·18 claims
- 3183US8737036B2Titanium based high-K dielectric filmsINTERMOLECULAR INC·Filed 2012·Granted May 27, 2014·4 cites·16 claims
- 3283US8531868B2Bipolar resistive-switching memory with a single diode per memory cellINTERMOLECULAR INC·Filed 2012·Granted Sep 10, 2013·5 cites·20 claims
- 3383US8383430B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2012·Granted Feb 26, 2013·3 cites·12 claims
- 3483US7968452B2Titanium-based high-K dielectric filmsINTERMOLECULAR INC·Filed 2009·Granted Jun 28, 2011·6 cites·20 claims
- 3582US9276211B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2015·Granted Mar 1, 2016·2 cites·20 claims
- 3682US8933429B2Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory arrayINTERMOLECULAR INC·Filed 2013·Granted Jan 13, 2015·3 cites·15 claims
- 3782US8097878B2Nonvolatile memory elements with metal-deficient resistive-switching metal oxidesKUMAR NITIN·Filed 2007·Granted Jan 17, 2012·14 cites·3 claims
- 3880US8921156B2Non-volatile resistive-switching memoriesINTERMOLECULAR INC·Filed 2013·Granted Dec 30, 2014·3 cites·20 claims
- 3979US8871621B2Method of forming an asymmetric MIMCAP or a schottky device as a selector element for a cross-bar memory arrayINTERMOLECULAR INC·Filed 2012·Granted Oct 28, 2014·4 cites·7 claims
- 4079US8318573B2Nonvolatile memory elementsMALHOTRA SANDRA G·Filed 2011·Granted Nov 27, 2012·3 cites·16 claims
- 4178US9029187B1Using multi-layer MIMCAPs with defective barrier layers as selector element for a cross bar memory arrayINTERMOLECULAR INC·Filed 2014·Granted May 12, 2015·2 cites·20 claims
- 4278US8574956B2Method of forming non-volatile resistive-switching memoriesPHATAK PRASHANT·Filed 2011·Granted Nov 5, 2013·3 cites·9 claims
- 4378US8501505B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2012·Granted Aug 6, 2013·2 cites·20 claims
- 4477US8963117B2Reduction of forming voltage in semiconductor devicesINTERMOLECULAR INC·Filed 2013·Granted Feb 24, 2015·4 cites·17 claims
- 4575US8750021B2Bipolar resistive-switching memory with a single diode per memory cellINTERMOLECULAR INC·Filed 2013·Granted Jun 10, 2014·3 cites·20 claims
- 4675US8698121B2Resistive switching memory element including doped silicon electrodeINTERMOLECULAR INC·Filed 2013·Granted Apr 15, 2014·2 cites·17 claims
- 4774US8554507B2Combinatorial process optimization methodology and systemINTERMOLECULAR INC·Filed 2012·Granted Oct 8, 2013·1 cites·10 claims
- 4874US8344375B2Nonvolatile memory elements with metal deficient resistive switching metal oxidesINTERMOLECULAR INC·Filed 2011·Granted Jan 1, 2013·4 cites·20 claims
- 4973US9318546B1Doped electrode for DRAM capacitor stackINTERMOLECULAR INC·Filed 2014·Granted Apr 19, 2016·2 cites·19 claims
- 5073US8822265B2Method for reducing forming voltage in resistive random access memoryINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·2 cites·19 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →