Inventor · disambiguated record
William Wei-Yuan Tien
Also filed as: TIEN WILLIAM WEI-YUAN
5 granted patents·37 citations·filing 2005–2011
75Inventor score
Top patents by PatentIndex Score
5 records- 0188US8174071B2High voltage LDMOS transistorTIEN WILLIAM WEI-YUAN·Filed 2008·Granted May 8, 2012·30 cites·20 claims
- 0264US7994580B2High voltage transistor with improved driving currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 9, 2011·3 cites·16 claims
- 0363US8268691B2High voltage transistor with improved driving currentTIEN WILLIAM WEI-YUAN·Filed 2011·Granted Sep 18, 2012·2 cites·17 claims
- 0457US8138559B2Recessed drift region for HVMOS breakdown improvementTIEN WILLIAM WEI-YUAN·Filed 2007·Granted Mar 20, 2012·2 cites·20 claims
- 0544US7915128B2High voltage semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 29, 2011·0 cites·23 claims
Join the waitlist — get patent alerts
Get an alert when William Wei-Yuan Tien files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →