Inventor · disambiguated record
Howard C. Kirsch
Also filed as: KIRSCH HOWARD · KIRSCH HOWARD C · KIRSCH HOWARD CLAYTON
122 granted patents·2 pending applications·3,579 citations·filing 1977–2019
99Inventor score
Files withMICRON TECHNOLOGY INC54MOTOROLA INC25VANGUARD INT SEMICONDUCT CORP20AMERICAN TELEPHONE & TELEGRAPH4BELL TELEPHONE LABOR INC4
Top patents by PatentIndex Score
124 records- 0198US7948008B2Floating body field-effect transistors, and methods of forming floating body field-effect transistorsMICRON TECHNOLOGY INC·Filed 2007·Granted May 24, 2011·116 cites·30 claims
- 0298US4160934ACurrent control circuit for light emitting diodeBELL TELEPHONE LABOR INC·Filed 1977·Granted Jul 10, 1979·166 cites·12 claims
- 0397US9721638B1Boosting a digit line voltage for a write operationMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 1, 2017·20 cites·25 claims
- 0497US6734482B1Trench buried bit line memory devicesMICRON TECHNOLOGY INC·Filed 2002·Granted May 11, 2004·112 cites·49 claims
- 0596US7365384B2Trench buried bit line memory devices and methods thereofMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 29, 2008·25 cites·25 claims
- 0696US7345937B2Open digit line array architecture for a memory arrayMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 18, 2008·33 cites·15 claims
- 0796US6806137B2Trench buried bit line memory devices and methods thereofMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 19, 2004·69 cites·39 claims
- 0896US6057573ADesign for high density memory with relaxed metal pitchVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 2, 2000·209 cites·6 claims
- 0995US10074415B2Boosting a digit line voltage for a write operationMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 11, 2018·13 cites·20 claims
- 1095US6803826B2Delay-locked loop circuit and method using a ring oscillator and counter-based delayMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 12, 2004·94 cites·37 claims
- 1194US5496756AMethod for forming a nonvolatile memory deviceMOTOROLA INC·Filed 1995·Granted Mar 5, 1996·117 cites·9 claims
- 1294US4649522AFast column access memoryAT & T BELL LAB·Filed 1985·Granted Mar 10, 1987·89 cites·5 claims
- 1393US5739564ASemiconductor device having a static-random-access memory cellMOTOROLA INC·Filed 1995·Granted Apr 14, 1998·114 cites·20 claims
- 1493US4583157AIntegrated circuit having a variably boosted nodeAT & T BELL LAB·Filed 1985·Granted Apr 15, 1986·102 cites·7 claims
- 1592US6759911B2Delay-locked loop circuit and method using a ring oscillator and counter-based delayMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 6, 2004·58 cites·45 claims
- 1692US5266512AMethod for forming a nested surface capacitorMOTOROLA INC·Filed 1991·Granted Nov 30, 1993·103 cites·17 claims
- 1791US7898857B2Memory structure having volatile and non-volatile memory portionsMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 1, 2011·17 cites·24 claims
- 1890US5488579AThree-dimensionally integrated nonvolatile SRAM cell and processMOTOROLA INC·Filed 1994·Granted Jan 30, 1996·71 cites·7 claims
- 1990US5212110AMethod for forming isolation regions in a semiconductor deviceMOTOROLA INC·Filed 1992·Granted May 18, 1993·123 cites·10 claims
- 2089US6901023B2Word line driver for negative voltageMICRON TECHNOLOGY INC·Filed 2004·Granted May 31, 2005·42 cites·35 claims
- 2189US6023174AAdjustable, full CMOS input buffer for TTL, CMOS, or low swing input protocolsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Feb 8, 2000·56 cites·33 claims
- 2289US5262352AMethod for forming an interconnection structure for conductive layersMOTOROLA INC·Filed 1992·Granted Nov 16, 1993·92 cites·20 claims
- 2388US6812799B2Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervalsMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 2, 2004·39 cites·45 claims
- 2488US6727740B2Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervalsMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 27, 2004·34 cites·40 claims
- 2588US5543339AProcess for forming an electrically programmable read-only memory cellMOTOROLA INC·Filed 1994·Granted Aug 6, 1996·61 cites·11 claims
- 2688US5408130AInterconnection structure for conductive layersMOTOROLA INC·Filed 1994·Granted Apr 18, 1995·86 cites·18 claims
- 2788US4672243AZero standby current TTL to CMOS input bufferAMERICAN TELEPHONE & TELEGRAPH·Filed 1985·Granted Jun 9, 1987·41 cites·5 claims
- 2887US7512025B2Open digit line array architecture for a memory arrayMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 31, 2009·12 cites·25 claims
- 2987US4704547AIGFET gating circuit having reduced electric field degradationAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Nov 3, 1987·38 cites·8 claims
- 3086US8921899B2Double gated 4F2 dram CHC cell and methods of fabricating the sameJUENGLING WERNER·Filed 2010·Granted Dec 30, 2014·6 cites·20 claims
- 3186US5272117AMethod for planarizing a layer of materialMOTOROLA INC·Filed 1992·Granted Dec 21, 1993·94 cites·21 claims
- 3285US8149619B2Memory structure having volatile and non-volatile memory portionsKIRSCH HOWARD C·Filed 2011·Granted Apr 3, 2012·9 cites·13 claims
- 3385US7986578B2Low voltage sense amplifier and sensing methodMICRON TECHNOLOGY INC·Filed 2009·Granted Jul 26, 2011·12 cites·23 claims
- 3485US5364810AMethods of forming a vertical field-effect transistor and a semiconductor memory cellMOTOROLA INC·Filed 1992·Granted Nov 15, 1994·83 cites·20 claims
- 3585US5286674AMethod for forming a via structure and semiconductor device having the sameMOTOROLA INC·Filed 1992·Granted Feb 15, 1994·86 cites·20 claims
- 3684US6335633B1Adjustable, full CMOS input buffer for TTL, CMOS, or low swing input protocolsVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jan 1, 2002·24 cites·12 claims
- 3783US7939394B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2008·Granted May 10, 2011·9 cites·21 claims
- 3883US7354812B2Multiple-depth STI trenches in integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 8, 2008·29 cites·13 claims
- 3982US6924686B2Synchronous mirror delay (SMD) circuit and method including a counter and reduced size bi-directional delay lineMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 2, 2005·25 cites·38 claims
- 4082US5095347APlural transistor silicon on insulator structure with shared electrodesMOTOROLA INC·Filed 1990·Granted Mar 10, 1992·51 cites·6 claims
- 4181US8737157B2Memory device word line drivers and methodsKIM TAE·Filed 2011·Granted May 27, 2014·6 cites·38 claims
- 4281US5416736AVertical field-effect transistor and a semiconductor memory cell having the transistorMOTOROLA INC·Filed 1994·Granted May 16, 1995·65 cites·15 claims
- 4381US5118639AProcess for the formation of elevated source and drain structures in a semiconductor deviceMOTOROLA INC·Filed 1990·Granted Jun 2, 1992·49 cites·18 claims
- 4481US4669063ASense amplifier for a dynamic RAMTHOMSON COMPONENTS MOSTEK CORP·Filed 1982·Granted May 26, 1987·29 cites·13 claims
- 4580US8598912B2Transistor voltage threshold mismatch compensated sense amplifiers and methods for precharging sense amplifiersTHOMPSON J WAYNE·Filed 2010·Granted Dec 3, 2013·7 cites·31 claims
- 4680US6888769B2Method and circuit for reducing DRAM refresh power by reducing access transistor sub threshold leakageMICRON TECHNOLOGY INC·Filed 2002·Granted May 3, 2005·24 cites·167 claims
- 4780US6621316B1Synchronous mirror delay (SMD) circuit and method including a counter and reduced size bi-directional delay lineMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 16, 2003·24 cites·48 claims
- 4880US5792680AMethod of forming a low cost DRAM cell with self aligned twin tub CMOS devices and a pillar shaped capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Aug 11, 1998·44 cites·22 claims
- 4978US8743628B2Line driver circuits, methods, and apparatusesKIM TAE H·Filed 2011·Granted Jun 3, 2014·7 cites·38 claims
- 5078US7613024B2Local digit line architecture and method for memory devices having multi-bit or low capacitance memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Nov 3, 2009·9 cites·28 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →