Inventor · disambiguated record
Nobuhiko Sawaki
Also filed as: SAWAKI NOBUHIKO
9 granted patents·1 pending application·570 citations·filing 1986–2006
91Inventor score
Top patents by PatentIndex Score
10 records- 0194US4855249AProcess for growing III-V compound semiconductors on sapphire using a buffer layerUNIV NAGOYA·Filed 1988·Granted Aug 8, 1989·151 cites·9 claims
- 0293US6225650B1GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereofMITSUBISHI CABLE IND LTD·Filed 1998·Granted May 1, 2001·193 cites·12 claims
- 0390US6844572B2Light emitting semiconductor device and method of fabricating the sameSHARP KK·Filed 2003·Granted Jan 18, 2005·49 cites·8 claims
- 0490US6635901B2Semiconductor device including an InGaAIN layerSAWAKI NOBUHIKO·Filed 2001·Granted Oct 21, 2003·118 cites·10 claims
- 0577US6888867B2Semiconductor laser device and fabrication method thereofSHARP KK·Filed 2002·Granted May 3, 2005·14 cites·19 claims
- 0669US6927423B2Semiconductor element structure, electron emitter and method for fabricating a semiconductor element structureUNIV NAGOYA·Filed 2003·Granted Aug 9, 2005·8 cites·16 claims
- 0763US6806115B2Semiconductor light emitting device and method for producing the sameSHARP KK·Filed 2002·Granted Oct 19, 2004·15 cites·11 claims
- 0861US4816878ANegative resistance semiconductor deviceTOYODA CHUO KENKYUSHO KK·Filed 1986·Granted Mar 28, 1989·20 cites·7 claims
- 0957US8338853B2Substrate for forming light-emitting layer, light emitter and light-emitting substanceKIYAMA AKIRA·Filed 2006·Granted Dec 25, 2012·2 cites·12 claims
- 1039US2005245054A1Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the sameUNIV NAGOYA NAT UNIV CORP·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →