Inventor · disambiguated record
Mustafa Pinarbasi
Also filed as: METIN SERHAT · PINARBASI MUSTAFA · PINARBASI MUSTAFA M · PINARBASI MUSTAFA MICHAEL
250 granted patents·50 pending applications·3,741 citations·filing 1994–2023
99Inventor score
Files withHITACHI GLOBAL STORAGE TECH101IBM72SPIN MEMORY INC33SPIN TRANSFER TECH INC18INTEGRATED SILICON SOLUTION CAYMAN INC16
Top patents by PatentIndex Score
300 records- 0199US9853206B2Precessional spin current structure for MRAMSPIN TRANSFER TECH INC·Filed 2015·Granted Dec 26, 2017·88 cites·17 claims
- 0299US9728712B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN TRANSFER TECH INC·Filed 2015·Granted Aug 8, 2017·72 cites·28 claims
- 0399US9406876B2Method for manufacturing MTJ memory deviceSPIN TRANSFER TECH INC·Filed 2016·Granted Aug 2, 2016·100 cites·21 claims
- 0498US10236439B1Switching and stability control for perpendicular magnetic tunnel junction deviceSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·15 cites·11 claims
- 0598US10032978B1MRAM with reduced stray magnetic fieldsSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 24, 2018·33 cites·34 claims
- 0698US9263667B1Method for manufacturing MTJ memory deviceSPIN TRANSFER TECHNOLOGIES INC·Filed 2014·Granted Feb 16, 2016·93 cites·20 claims
- 0797US10339993B1Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switchingSPIN MEMORY INC·Filed 2017·Granted Jul 2, 2019·10 cites·20 claims
- 0897US10026892B2Precessional spin current structure for MRAMSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 17, 2018·27 cites·16 claims
- 0997US9741926B1Memory cell having magnetic tunnel junction and thermal stability enhancement layerSPIN TRANSFER TECH INC·Filed 2016·Granted Aug 22, 2017·89 cites·22 claims
- 1096US10468588B2Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layerSPIN MEMORY INC·Filed 2018·Granted Nov 5, 2019·8 cites·20 claims
- 1196US9773974B2Polishing stop layer(s) for processing arrays of semiconductor elementsSPIN TRANSFER TECH INC·Filed 2016·Granted Sep 26, 2017·71 cites·20 claims
- 1296US7652856B2Current perpendicular to plane (CPP) magnetoresistive sensor having strong pinning and small gap thicknessHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jan 26, 2010·26 cites·20 claims
- 1396US7580230B2Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edgesHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Aug 25, 2009·25 cites·5 claims
- 1496US7522391B2Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structureHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Apr 21, 2009·32 cites·21 claims
- 1596US7369371B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 6, 2008·28 cites·21 claims
- 1696US6381106B1Top spin valve sensor that has a free layer structure with a cobalt iron boron (cofeb) layerIBM·Filed 2000·Granted Apr 30, 2002·66 cites·30 claims
- 1795US10580827B1Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switchingSPIN MEMORY INC·Filed 2018·Granted Mar 3, 2020·8 cites·37 claims
- 1895US10468590B2High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memorySPIN MEMORY INC·Filed 2016·Granted Nov 5, 2019·7 cites·15 claims
- 1995US9337412B2Magnetic tunnel junction structure for MRAM deviceSPIN TRANSFER TECHNOLOGIES INC·Filed 2014·Granted May 10, 2016·79 cites·12 claims
- 2095US7848065B2Magnetoresistive sensor having an anisotropic hard bias with high coercivityHITACHI GLOBAL STORAGE TECH NL·Filed 2006·Granted Dec 7, 2010·23 cites·10 claims
- 2195US7466524B2Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flipHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Dec 16, 2008·20 cites·8 claims
- 2295US6583969B1Pinned layer structure having nickel iron film for reducing coercivity of a free layer structure in a spin valve sensorIBM·Filed 2000·Granted Jun 24, 2003·56 cites·48 claims
- 2395US5883764AMagnetoresistive sensor having multi-layered refractory metal conductor leadsIBM·Filed 1997·Granted Mar 16, 1999·98 cites·26 claims
- 2494US7436637B2Magnetoresistive sensor having an improved pinning structureHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Oct 14, 2008·27 cites·18 claims
- 2594US6741432B2Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and self-pinned antiparallel (AP) pinned layer structureIBM·Filed 2002·Granted May 25, 2004·46 cites·25 claims
- 2694US5491600AMulti-layer conductor leads in a magnetoresistive headIBM·Filed 1994·Granted Feb 13, 1996·134 cites·20 claims
- 2793US8404512B1Crystallization methods for preparing group IBIIIAVIA thin film solar absorbersAKSU SERDAR·Filed 2011·Granted Mar 26, 2013·13 cites·17 claims
- 2893US6785102B2Spin valve sensor with dual self-pinned AP pinned layer structuresHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Aug 31, 2004·41 cites·8 claims
- 2993US6636400B2Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layerIBM·Filed 2001·Granted Oct 21, 2003·39 cites·20 claims
- 3092US6865062B2Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned without a pinning layerIBM·Filed 2002·Granted Mar 8, 2005·35 cites·31 claims
- 3192US6856493B2Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layerIBM·Filed 2002·Granted Feb 15, 2005·37 cites·33 claims
- 3292US6624985B1Pinning layer seeds for CPP geometry spin valve sensorsIBM·Filed 2002·Granted Sep 23, 2003·37 cites·24 claims
- 3392US6413380B1Method and apparatus for providing deposited layer structures and articles so producedIBM·Filed 2000·Granted Jul 2, 2002·51 cites·11 claims
- 3492US6208492B1Seed layer structure for spin valve sensorIBM·Filed 1999·Granted Mar 27, 2001·71 cites·45 claims
- 3592US6086727AMethod and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering systemIBM·Filed 1998·Granted Jul 11, 2000·82 cites·25 claims
- 3691US10643680B2Memory cell having magnetic tunnel junction and thermal stability enhancement layerSPIN MEMORY INC·Filed 2018·Granted May 5, 2020·3 cites·13 claims
- 3791US10388860B2Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard maskSPIN TRANSFER TECH INC·Filed 2017·Granted Aug 20, 2019·5 cites·18 claims
- 3891US10319900B1Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment densitySPIN MEMORY INC·Filed 2017·Granted Jun 11, 2019·4 cites·21 claims
- 3991US8266785B2Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stabilityFREITAG JAMES MAC·Filed 2007·Granted Sep 18, 2012·14 cites·9 claims
- 4091US7602589B2Magnetoresistive sensor having shape enhanced pinning and low lead resistanceHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 13, 2009·20 cites·14 claims
- 4191US7420788B2GMR and MR enhancing seedlayers for self pinned spin valvesHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Sep 2, 2008·15 cites·20 claims
- 4291US6317299B1Seed layer for improving pinning field spin valve sensorIBM·Filed 2000·Granted Nov 13, 2001·33 cites·44 claims
- 4391US6306266B1Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performanceIBM·Filed 2000·Granted Oct 23, 2001·35 cites·27 claims
- 4491US6275362B1Magnetic read head having spin valve sensor with improved seed layer for a free layerIBM·Filed 1999·Granted Aug 14, 2001·68 cites·41 claims
- 4590US6208491B1Spin valve with improved capping layer structureIBM·Filed 1999·Granted Mar 27, 2001·59 cites·45 claims
- 4689US7663846B2Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinningHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Feb 16, 2010·17 cites·34 claims
- 4789US7564659B2Magnetoresistive sensor having an anisotropic pinned layer for pinning improvementHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jul 21, 2009·16 cites·18 claims
- 4889US7420787B2Magnetoresistive sensor having a shape enhanced pinned layerHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Sep 2, 2008·17 cites·8 claims
- 4989US6353518B2Spin valve sensor having antiparallel (AP) pinned layer structure with low coercivity and high resistanceIBM·Filed 2001·Granted Mar 5, 2002·26 cites·12 claims
- 5088US6655006B2Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layerIBM·Filed 2001·Granted Dec 2, 2003·20 cites·11 claims
Showing the top 50 of 300 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →