Inventor · disambiguated record
Matt Yeh
Also filed as: YEH MATT
22 granted patents·3 pending applications·183 citations·filing 2005–2015
94Inventor score
Top patents by PatentIndex Score
25 records- 0195US8361848B2Precise resistor on a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·24 cites·20 claims
- 0294US8048733B2Method for fabricating a gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·29 cites·21 claims
- 0393US8329546B2Modified profile gate structure for semiconductor device and methods of forming thereofLEE DA-YUAN·Filed 2010·Granted Dec 11, 2012·22 cites·20 claims
- 0491US8415254B2Method for removing dummy poly in a gate last processYEH MATT·Filed 2008·Granted Apr 9, 2013·19 cites·20 claims
- 0591US8361855B2Method for fabricating a gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 29, 2013·15 cites·20 claims
- 0691US7732344B1High selectivity etching process for metal gate N/P patterningTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 8, 2010·26 cites·20 claims
- 0786US8334197B2Method of fabricating high-k/metal gate deviceLEE DA-YUAN·Filed 2009·Granted Dec 18, 2012·13 cites·20 claims
- 0885US8222132B2Fabricating high-K/metal gate devices in a gate last processLEE DA-YUAN·Filed 2009·Granted Jul 17, 2012·12 cites·20 claims
- 0976US8367563B2Methods for a gate replacement processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 5, 2013·5 cites·20 claims
- 1073US8110490B2Gate oxide leakage reductionYEH MATT·Filed 2007·Granted Feb 7, 2012·5 cites·23 claims
- 1173US7915105B2Method for patterning a metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Mar 29, 2011·5 cites·18 claims
- 1270US8658525B2Methods for a gate replacement processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 25, 2014·2 cites·20 claims
- 1370US7713854B2Gate dielectric layers and methods of fabricating gate dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 11, 2010·3 cites·16 claims
- 1468US8268085B2Methods for forming metal gate transistorsYEH MATT·Filed 2010·Granted Sep 18, 2012·2 cites·17 claims
- 1564US8357617B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·1 cites·20 claims
- 1655US8993452B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 31, 2015·0 cites·20 claims
- 1754US9362124B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 1849US8980706B2Double treatment on hard mask for gate N/P patterningYEH MATT·Filed 2009·Granted Mar 17, 2015·0 cites·20 claims
- 1949US7727900B2Surface preparation for gate oxide formation that avoids chemical oxide formationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·0 cites·18 claims
- 2044US8173504B2Method of fabricating gate electrode using a treated hard maskYEH MATT·Filed 2010·Granted May 8, 2012·0 cites·20 claims
- 2144US2008060682A1High temperature spm treatment for photoresist strippingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2241US8569185B2Method of fabricating gate electrode using a treated hard maskYEH MATT·Filed 2010·Granted Oct 29, 2013·0 cites·20 claims
- 2340US8114721B2Method of controlling gate thickness in forming FinFET devicesLIN SHUN WU·Filed 2009·Granted Feb 14, 2012·0 cites·20 claims
- 2437US2006275975A1Nitridated gate dielectric layerYEH MATT·Filed 2005·Application pending·0 cites
- 2535US2011097867A1Method of controlling gate thicknesses in forming fusi gatesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →