Inventor · disambiguated record
Jason Jenny
Also filed as: JENNY JASON R · JENNY JASON RONALD
19 granted patents·3 pending applications·310 citations·filing 2002–2013
95Inventor score
Top patents by PatentIndex Score
22 records- 0195US7323051B2One hundred millimeter single crystal silicon carbide waferCREE INC·Filed 2005·Granted Jan 29, 2008·30 cites·27 claims
- 0295US7316747B2Seeded single crystal silicon carbide growth and resulting crystalsCREE INC·Filed 2005·Granted Jan 8, 2008·34 cites·68 claims
- 0394US8147991B2One hundred millimeter single crystal silicon carbide waferJENNY JASON RONALD·Filed 2010·Granted Apr 3, 2012·16 cites·25 claims
- 0491US6814801B2Method for producing semi-insulating resistivity in high purity silicon carbide crystalsCREE INC·Filed 2002·Granted Nov 9, 2004·63 cites·43 claims
- 0589US7601441B2One hundred millimeter high purity semi-insulating single crystal silicon carbide waferCREE INC·Filed 2004·Granted Oct 13, 2009·27 cites·30 claims
- 0687US9099377B2Micropipe-free silicon carbide and related method of manufactureBASCERI CEM·Filed 2007·Granted Aug 4, 2015·13 cites·31 claims
- 0786US8410488B2Micropipe-free silicon carbide and related method of manufactureBASCERI CEM·Filed 2007·Granted Apr 2, 2013·11 cites·25 claims
- 0885US7414268B2High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Aug 19, 2008·12 cites·21 claims
- 0983US7147715B2Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogenCREE INC·Filed 2003·Granted Dec 12, 2006·20 cites·42 claims
- 1081US9059118B2Method for producing semi-insulating resistivity in high purity silicon carbide crystalsJENNY JASON RONALD·Filed 2009·Granted Jun 16, 2015·6 cites·5 claims
- 1181US8618553B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCARTER JR CALVIN H·Filed 2010·Granted Dec 31, 2013·2 cites·12 claims
- 1281US7391057B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Jun 24, 2008·9 cites·18 claims
- 1381US6974720B2Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed therebyCREE INC·Filed 2003·Granted Dec 13, 2005·25 cites·13 claims
- 1480US7323052B2Apparatus and method for the production of bulk silicon carbide single crystalsCREE INC·Filed 2005·Granted Jan 29, 2008·11 cites·27 claims
- 1580US7319518B2Double side polished wafer scratch inspection toolCREE INC·Filed 2005·Granted Jan 15, 2008·6 cites·51 claims
- 1678US7220313B2Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambientCREE INC·Filed 2003·Granted May 22, 2007·15 cites·26 claims
- 1765US6964917B2Semi-insulating silicon carbide produced by Neutron transmutation dopingCREE INC·Filed 2003·Granted Nov 15, 2005·9 cites·31 claims
- 1857US7615801B2High voltage silicon carbide devices having bi-directional blocking capabilitiesCREE INC·Filed 2005·Granted Nov 10, 2009·1 cites·24 claims
- 1955US7811943B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCREE INC·Filed 2005·Granted Oct 12, 2010·0 cites·45 claims
- 2050US2013181231A1Micropipe-free silicon carbide and related method of manufactureCREE INC·Filed 2013·Application pending·0 cites
- 2143US2004206298A1Method for producing semi-insulating resistivity in high purity silicon carbide crystalsFiled 2004·Application pending·0 cites
- 2241US2006261346A1High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the sameRYU SEI-HYUNG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →