Inventor · disambiguated record
Yi-Nan Chen
Also filed as: CHEN YI-NAN
135 granted patents·69 pending applications·682 citations·filing 1998–2015
99Inventor score
Top patents by PatentIndex Score
204 records- 0194US6808979B1Method for forming vertical transistor and trench capacitorNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 26, 2004·81 cites·19 claims
- 0286US6713341B2Method of forming a bottle-shaped trench in a semiconductor substrateNANYA TECHNOLOGY CORP·Filed 2002·Granted Mar 30, 2004·38 cites·18 claims
- 0385US8278732B1Antifuse element for integrated circuit deviceHO JAR-MING·Filed 2011·Granted Oct 2, 2012·8 cites·10 claims
- 0485US6846744B1Method of fabricating a bottle shaped deep trench for trench capacitor DRAM devicesNANYA TECHNOLOGY CORP·Filed 2003·Granted Jan 25, 2005·33 cites·8 claims
- 0584US8420541B2Method for increasing adhesion between polysilazane and silicon nitrideSHIH SHING-YIH·Filed 2011·Granted Apr 16, 2013·7 cites·20 claims
- 0684US6576530B1Method of fabricating shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Jun 10, 2003·34 cites·10 claims
- 0783US8389402B2Method for via formation in a semiconductor deviceLIN CHIH CHING·Filed 2011·Granted Mar 5, 2013·6 cites·11 claims
- 0882US8367509B1Self-aligned method for forming contact of device with reduced step heightNANYA TECHNOLOGY CORP·Filed 2011·Granted Feb 5, 2013·7 cites·18 claims
- 0981US6737334B2Method of fabricating a shallow trench isolation structureNANYA TECHNOLOGY CORP·Filed 2002·Granted May 18, 2004·26 cites·19 claims
- 1079US7341952B2Multi-layer hard mask structure for etching deep trench in substrateNANYA TECHNOLOGY CORP·Filed 2006·Granted Mar 11, 2008·6 cites·14 claims
- 1178US9287221B2Method for forming crack stop structureNANYA TECHNOLOGY CORP·Filed 2015·Granted Mar 15, 2016·2 cites·7 claims
- 1278US8252684B1Method of forming a trench by a silicon-containing maskLEE HSIU-CHUN·Filed 2011·Granted Aug 28, 2012·6 cites·7 claims
- 1378US6727159B2Method of forming a shallow trench isolation in a semiconductor substrateNANYA TECHNOLOGY CORP·Filed 2002·Granted Apr 27, 2004·23 cites·7 claims
- 1477US6800535B1Method for forming bottle-shaped trenchesNANYA TECHNOLOGY CORP·Filed 2003·Granted Oct 5, 2004·17 cites·27 claims
- 1576US7211483B2Memory device with vertical transistors and deep trench capacitors and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2005·Granted May 1, 2007·4 cites·29 claims
- 1675US7678692B2Fabrication method for a damascene bit line contact plugNANYA TECHNOLOGY CORP·Filed 2006·Granted Mar 16, 2010·6 cites·16 claims
- 1775US6426271B2Method of rounding the corner of a shallow trench isolation regionNANYA TECHNOLOGY CORP·Filed 2001·Granted Jul 30, 2002·17 cites·20 claims
- 1874US8288279B1Method for forming conductive contactHO JAR-MING·Filed 2011·Granted Oct 16, 2012·4 cites·10 claims
- 1974US8178418B1Method for fabricating intra-device isolation structureHO JAR-MING·Filed 2011·Granted May 15, 2012·3 cites·10 claims
- 2074USD640995SPacking structure of light-emitting diodeLITE ON TECHNOLOGY CORP·Filed 2010·Granted Jul 5, 2011·20 cites·1 claims
- 2173US8486834B2Method for manufacturing memory deviceHSU PING·Filed 2011·Granted Jul 16, 2013·4 cites·7 claims
- 2273US6872629B2Method of forming a memory cell with a single sided buried strapNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 29, 2005·14 cites·20 claims
- 2373US6716696B2Method of forming a bottle-shaped trench in a semiconductor substrateNANYA TECHNOLOGY CORP·Filed 2002·Granted Apr 6, 2004·18 cites·10 claims
- 2469US8530306B2Method of forming a slit recess channel gateWU TIEH-CHIANG·Filed 2011·Granted Sep 10, 2013·2 cites·11 claims
- 2569US8309459B1Semiconductor processWANG WEN-CHIEH·Filed 2011·Granted Nov 13, 2012·3 cites·14 claims
- 2669US8178440B1Method for forming a recess array device structure in a semiconductor substrateWU CHANG MING·Filed 2011·Granted May 15, 2012·3 cites·14 claims
- 2768US8642479B2Method for forming openings in semiconductor deviceLIN CHIH-CHING·Filed 2011·Granted Feb 4, 2014·2 cites·11 claims
- 2868US7115491B2Method for forming self-aligned contact in semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2004·Granted Oct 3, 2006·15 cites·16 claims
- 2968US7064044B2Contact etching utilizing multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2004·Granted Jun 20, 2006·12 cites·10 claims
- 3068US6987322B2Contact etching utilizing multi-layer hard maskNANYA TECHNOLOGY CORP·Filed 2004·Granted Jan 17, 2006·12 cites·8 claims
- 3167US8865550B2Memory device having buried bit line and vertical transistor and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2014·Granted Oct 21, 2014·1 cites·18 claims
- 3267US8545289B2Distance monitoring deviceLIAO CHIEN-MAO·Filed 2011·Granted Oct 1, 2013·2 cites·11 claims
- 3367US6929998B2Method for forming bottle-shaped trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 16, 2005·11 cites·20 claims
- 3466US8759907B2Memory device having buried bit line and vertical transistor and fabrication method thereofWU TIEH-CHIANG·Filed 2011·Granted Jun 24, 2014·1 cites·16 claims
- 3566US8551881B2Method of bevel trimming three dimensional semiconductor deviceSHIH SHING-YIH·Filed 2011·Granted Oct 8, 2013·2 cites·20 claims
- 3666US8525262B2Transistor with buried finsWU TIEH-CHIANG·Filed 2011·Granted Sep 3, 2013·2 cites·12 claims
- 3766US8476764B2Bonding pad structure for semiconductor devicesHUANG TSE-YAO·Filed 2011·Granted Jul 2, 2013·2 cites·9 claims
- 3866US6780739B1Bit line contact structure and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Aug 24, 2004·13 cites·29 claims
- 3966US6774007B2Method of fabricating shallow trench isolationNANYA TECHNOLOGY CORP·Filed 2002·Granted Aug 10, 2004·14 cites·9 claims
- 4065US8536056B2Method of forming conductive patternSU KUO-HUI·Filed 2011·Granted Sep 17, 2013·2 cites·9 claims
- 4165US6833081B2Method of metal etching post cleaningNANYA TECHNOLOGY CORP·Filed 2002·Granted Dec 21, 2004·10 cites·19 claims
- 4264US8828842B2Crack stop structure and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2014·Granted Sep 9, 2014·1 cites·9 claims
- 4363US8470515B2Method of forming an etch maskHUANG TSE-YAO·Filed 2011·Granted Jun 25, 2013·1 cites·8 claims
- 4463US7067418B2Interconnect structure and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2005·Granted Jun 27, 2006·2 cites·10 claims
- 4562US8420477B2Method for fabricating a gate dielectric layer and for fabricating a gate structureSU KUO HUI·Filed 2011·Granted Apr 16, 2013·1 cites·19 claims
- 4661US8399321B2Method for manufacturing memory deviceHSU PING·Filed 2011·Granted Mar 19, 2013·1 cites·15 claims
- 4761US6960530B2Method of reducing the aspect ratio of a trenchNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 1, 2005·8 cites·20 claims
- 4860US8739806B2Chemical mechanical polishing systemLIU LI-CHUNG·Filed 2011·Granted Jun 3, 2014·1 cites·7 claims
- 4960US8487397B2Method for forming self-aligned contactHO JAR-MING·Filed 2011·Granted Jul 16, 2013·1 cites·13 claims
- 5058US7056832B2Deep trench self-alignment process for an active area of a partial vertical cellNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 6, 2006·6 cites·20 claims
Showing the top 50 of 204 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →