Inventor · disambiguated record
Woojae Jang
Also filed as: JANG WOOJAE
4 granted patents·7 pending applications·5 citations·filing 2018–2024
64Inventor score
Files withSAMSUNG ELECTRONICS CO LTD11
Top patents by PatentIndex Score
11 records- 0189US11257841B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·18 claims
- 0264US10699789B2Nonvolatile memory device and memory system including nonvolatile memory device that controls the erase speeds of cell stringsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 30, 2020·2 cites·18 claims
- 0362US2025386501A1Semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0460US11699490B2Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·10 claims
- 0559US2023307062A1Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0658US2024258347A1Image sensor with stack structure and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0756US2025155810A1Photosensitive polymer, photoresist composition including the same, and method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0855US11164636B2Nonvolatile memory device and memory system including nonvolatile memory device that controls the erase speeds of cell stringsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 2, 2021·0 cites·10 claims
- 0946US2025166715A1Memory device, memory system, and operating method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1046US2024282377A1Nonvolatile memory device and operating method of nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1140US2024161842A1Memory device with improved threshold voltage distribution and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →