Inventor · disambiguated record
Tanuj Saxena
Also filed as: SAXENA TANUJ
15 granted patents·3 pending applications·42 citations·filing 2014–2025
88Inventor score
Top patents by PatentIndex Score
18 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0293US10811502B1Method of manufacture of super-junction power semiconductor deviceNXP USA INC·Filed 2019·Granted Oct 20, 2020·14 cites·19 claims
- 0386US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 0482US11329150B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 0578US10153357B1Superjunction power semiconductor device and method for formingNXP USA INC·Filed 2017·Granted Dec 11, 2018·3 cites·19 claims
- 0667US11631763B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 0766US10644146B1Vertical bi-directional switches and method for making sameNXP USA INC·Filed 2018·Granted May 5, 2020·1 cites·20 claims
- 0866US10323980B2Tunable photocapacitive optical radiation sensor enabled radio transmitter and applications thereofRENSSELAER POLYTECH INST·Filed 2014·Granted Jun 18, 2019·2 cites·18 claims
- 0963US11489072B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2021·Granted Nov 1, 2022·0 cites·5 claims
- 1061US12170254B2Transistor with integrated short circuit protectionNXP USA INC·Filed 2022·Granted Dec 17, 2024·0 cites·17 claims
- 1156US11004970B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2019·Granted May 11, 2021·0 cites·15 claims
- 1256US10672902B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 1355US2025096799A1Protection structure for an enhancement-mode fet of a circuit and corresponding methodNXP USA INC·Filed 2024·Application pending·0 cites
- 1453US2025280574A1Electronic device including a buried shield and a gap regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1551US12349436B2Termination ballast to suppress hotspot formation in trench field plate power MOSFETsNXP USA INC·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 1651US10297684B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2017·Granted May 21, 2019·0 cites·11 claims
- 1751US2025280589A1Electronic device including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2025·Application pending·0 cites
- 1847US10607880B2Die with buried doped isolation regionNXP USA INC·Filed 2018·Granted Mar 31, 2020·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →