Inventor · disambiguated record
Robert J. Purtell
Also filed as: PURTELL ROBERT J · PURTELL ROBERT JOSEPH
29 granted patents·17 pending applications·589 citations·filing 1996–2017
97Inventor score
Top patents by PatentIndex Score
46 records- 0196US5908510AResidue removal by supercritical fluidsIBM·Filed 1996·Granted Jun 1, 1999·206 cites·23 claims
- 0294US5976264ARemoval of fluorine or chlorine residue by liquid CO2IBM·Filed 1998·Granted Nov 2, 1999·142 cites·19 claims
- 0390US7504336B2Methods for forming CMOS devices with intrinsically stressed metal silicide layersIBM·Filed 2006·Granted Mar 17, 2009·16 cites·18 claims
- 0490US6657244B1Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formationIBM·Filed 2002·Granted Dec 2, 2003·55 cites·8 claims
- 0588US6440851B1Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 1999·Granted Aug 27, 2002·57 cites·24 claims
- 0681US8569183B2Low temperature dielectric flow using microwavesPURTELL ROBERT J·Filed 2011·Granted Oct 29, 2013·5 cites·34 claims
- 0780US7696034B2Methods of base formation in a BiCOMS processIBM·Filed 2008·Granted Apr 13, 2010·6 cites·9 claims
- 0880US7109116B1Method for reducing dendrite formation in nickel silicon salicide processesIBM·Filed 2005·Granted Sep 19, 2006·7 cites·4 claims
- 0979US7390721B2Methods of base formation in a BiCMOS processIBM·Filed 2005·Granted Jun 24, 2008·6 cites·12 claims
- 1078US7759741B2Method and apparatus for forming nickel silicide with low defect density in FET devicesIBM·Filed 2008·Granted Jul 20, 2010·4 cites·11 claims
- 1178US7456095B2Method and apparatus for forming nickel silicide with low defect density in FET devicesIBM·Filed 2005·Granted Nov 25, 2008·4 cites·8 claims
- 1276US6965133B2Method of base formation in a BiCMOS processIBM·Filed 2004·Granted Nov 15, 2005·16 cites·9 claims
- 1374US7344983B2Clustered surface preparation for silicide and metal contactsIBM·Filed 2005·Granted Mar 18, 2008·4 cites·5 claims
- 1471US6875286B2Solid CO2 cleaningIBM·Filed 2002·Granted Apr 5, 2005·15 cites·10 claims
- 1570US6927393B2Method of in situ monitoring of supercritical fluid process conditionsIBM·Filed 2002·Granted Aug 9, 2005·8 cites·12 claims
- 1666US7485572B2Method for improved formation of cobalt silicide contacts in semiconductor devicesIBM·Filed 2006·Granted Feb 3, 2009·3 cites·3 claims
- 1765US8143125B2Structure and method for forming a salicide on the gate electrode of a trench-gate FETPURTELL ROBERT J·Filed 2009·Granted Mar 27, 2012·3 cites·19 claims
- 1864US8298385B2Method and apparatus for forming nickel silicide with low defect density in FET devicesWONG KEITH KWONG HON·Filed 2008·Granted Oct 30, 2012·1 cites·4 claims
- 1964US7659199B2Air break for improved silicide formation with composite capsIBM·Filed 2008·Granted Feb 9, 2010·2 cites·14 claims
- 2064US7320938B2Method for reducing dendrite formation in nickel silicon salicide processesIBM·Filed 2006·Granted Jan 22, 2008·2 cites·7 claims
- 2163US9892920B1Low stress bonding of silicon or germanium partsLAM RES CORP·Filed 2017·Granted Feb 13, 2018·1 cites·20 claims
- 2263US7081208B2Method to build a microfilterIBM·Filed 2002·Granted Jul 25, 2006·9 cites·3 claims
- 2360US2007087541A1Method and apparatus for deposition & formation of metal silicidesGIEWONT KENNETH J·Filed 2006·Application pending·0 cites
- 2457US8658500B2Single crystal U-MOS gates using microwave crystal regrowthPURTELL ROBERT J·Filed 2012·Granted Feb 25, 2014·2 cites·20 claims
- 2556US7081676B2Structure for controlling the interface roughness of cobalt disilicideIBM·Filed 2003·Granted Jul 25, 2006·5 cites·8 claims
- 2655US7622386B2Method for improved formation of nickel silicide contacts in semiconductor devicesIBM·Filed 2006·Granted Nov 24, 2009·1 cites·10 claims
- 2755US7417290B2Air break for improved silicide formation with composite capsIBM·Filed 2006·Granted Aug 26, 2008·2 cites·10 claims
- 2852US2008156257A1Clustered surface preparation for silicide and metal contactsIBM·Filed 2007·Application pending·0 cites
- 2949US7208414B2Method for enhanced uni-directional diffusion of metal and subsequent silicide formationIBM·Filed 2004·Granted Apr 24, 2007·3 cites·23 claims
- 3049US2013224922A1UMOS Semiconductor Devices Formed by Low Temperature ProcessingFAIRCHILD SEMICONDUCTOR·Filed 2013·Application pending·0 cites
- 3148US2005067745A1Method and apparatus for deposition & formation of metal silicidesFiled 2003·Application pending·0 cites
- 3247US6809030B2Method and structure for controlling the interface roughness of cobalt disilicideIBM·Filed 2002·Granted Oct 26, 2004·2 cites·9 claims
- 3347US2007128867A1Method for enhanced uni-directional diffusion of metal and subsequent silicide formationIBM·Filed 2007·Application pending·0 cites
- 3446US7129169B2Method for controlling voiding and bridging in silicide formationIBM·Filed 2004·Granted Oct 31, 2006·2 cites·6 claims
- 3545US2008020535A1Silicide cap structure and process for reduced stress and improved gate sheet resistanceIBM·Filed 2007·Application pending·0 cites
- 3643US2011006409A1Nickel-titanum contact layers in semiconductor devicesGRUENHAGEN MICHAEL D·Filed 2009·Application pending·0 cites
- 3743US2009152590A1Method and structure for semiconductor devices with silicon-germanium depositsIBM·Filed 2007·Application pending·0 cites
- 3842US2012080749A1Umos semiconductor devices formed by low temperature processingPURTELL ROBERT J·Filed 2010·Application pending·0 cites
- 3941US2006163671A1Silicide cap structure and process for reduced stress and improved gate sheet resistanceIBM·Filed 2005·Application pending·0 cites
- 4041US2009029549A1Method of silicide formation for nano structuresKWON OH-JUNG·Filed 2007·Application pending·0 cites
- 4139US2007123042A1Methods to form heterogeneous silicides/germanides in cmos technologyIBM·Filed 2005·Application pending·0 cites
- 4239US2013023097A1U-mos trench profile optimization and etch damage removal using microwavesPURTELL ROBERT J·Filed 2012·Application pending·0 cites
- 4339US2013023111A1Low temperature methods and apparatus for microwave crystal regrowthPURTELL ROBERT J·Filed 2012·Application pending·0 cites
- 4438US2013075747A1Esd protection using low leakage zener diodes formed with microwave radiationPURTELL ROBERT J·Filed 2012·Application pending·0 cites
- 4537US2012021577A1Gate trench conductor fillPURTELL ROBERT J·Filed 2011·Application pending·0 cites
- 4633US2012034769A1Low temperature microwave activation of heavy body implantsPURTELL ROBERT J·Filed 2011·Application pending·0 cites
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