Inventor · disambiguated record
Sergey Lopatin
Also filed as: LOPATIN SERGEY · LOPATIN SERGEY D
138 granted patents·26 pending applications·6,587 citations·filing 1997–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC102APPLIED MATERIALS INC26ENDRESS HAUSER SE CO KG10LOPATIN SERGEY D6KLA TENCOR TECH CORP5
Top patents by PatentIndex Score
164 records- 0198US6528409B1Interconnect structure formed in porous dielectric material with minimized degradation and electromigrationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·624 cites·67 claims
- 0298US6368954B1Method of copper interconnect formation using atomic layer copper depositionADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·312 cites·28 claims
- 0398US6344410B1Manufacturing method for semiconductor metalization barrierADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·292 cites·8 claims
- 0498US6242349B1Method of forming copper/copper alloy interconnection with reduced electromigrationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 5, 2001·439 cites·16 claims
- 0598US6144099ASemiconductor metalization barrierADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 7, 2000·319 cites·6 claims
- 0697US11069888B2Anode structure with binders for silicon and stabilized lithium metal powderAPPLIED MATERIALS INC·Filed 2017·Granted Jul 20, 2021·20 cites·19 claims
- 0797US7341633B2Apparatus for electroless depositionAPPLIED MATERIALS INC·Filed 2004·Granted Mar 11, 2008·230 cites·23 claims
- 0897US6291348B1Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 18, 2001·256 cites·10 claims
- 0997US6245670B1Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failureADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 12, 2001·287 cites·8 claims
- 1096US8206569B2Porous three dimensional copper, tin, copper-tin, copper-tin-cobalt, and copper-tin-cobalt-titanium electrodes for batteries and ultra capacitorsLOPATIN SERGEY D·Filed 2010·Granted Jun 26, 2012·15 cites·18 claims
- 1196US6528884B1Conformal atomic liner layer in an integrated circuit interconnectADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 4, 2003·90 cites·9 claims
- 1296US6515368B1Semiconductor device with copper-filled via includes a copper-zinc/alloy film for reduced electromigration of copperADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·130 cites·10 claims
- 1396US6420189B1Superconducting damascene interconnected for integrated circuitADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 16, 2002·166 cites·20 claims
- 1495US6447933B1Formation of alloy material using alternating depositions of alloy doping element and bulk materialADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 10, 2002·115 cites·25 claims
- 1595US6259160B1Apparatus and method of encapsulated copper (Cu) Interconnect formationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 10, 2001·162 cites·6 claims
- 1695US5757104AMethod of operating an ultransonic piezoelectric transducer and circuit arrangement for performing the methodENDRESS HAUSER GMBH CO·Filed 1997·Granted May 26, 1998·120 cites·16 claims
- 1794US6746971B1Method of forming copper sulfide for memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 8, 2004·120 cites·20 claims
- 1894US6482656B1Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuitADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 19, 2002·88 cites·21 claims
- 1994US6479902B1Semiconductor catalytic layer and atomic layer deposition thereofADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 12, 2002·85 cites·12 claims
- 2093US8669011B2Nucleation and growth of tin particles into three dimensional composite active anode for lithium high capacity energy storage deviceAPPLIED MATERIALS INC·Filed 2013·Granted Mar 11, 2014·5 cites·15 claims
- 2193US7704352B2High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrateAPPLIED MATERIALS INC·Filed 2006·Granted Apr 27, 2010·24 cites·28 claims
- 2293US6015747AMethod of metal/polysilicon gate formation in a field effect transistorADVANCED MICRO DEVICE·Filed 1998·Granted Jan 18, 2000·297 cites·13 claims
- 2392US9567683B2Porous three dimensional copper, tin, copper-tin, copper-tin-cobalt, and copper-tin-cobalt-titanium electrodes for batteries and ultra capacitorsLOPATIN SERGEY D·Filed 2012·Granted Feb 14, 2017·5 cites·20 claims
- 2492US8546020B2Nucleation and growth of tin particles into three dimensional composite active anode for lithium high capacity energy storage deviceLOPATIN SERGEY D·Filed 2010·Granted Oct 1, 2013·5 cites·5 claims
- 2592US6228759B1Method of forming an alloy precipitate to surround interconnect to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted May 8, 2001·69 cites·14 claims
- 2691US6686263B1Selective formation of top memory electrode by electroless formation of conductive materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 3, 2004·67 cites·16 claims
- 2790US9761882B2Manufacturing of high capacity prismatic lithium-ion alloy anodesAPPLIED MATERIALS INC·Filed 2017·Granted Sep 12, 2017·2 cites·13 claims
- 2890US6787458B1Polymer memory device formed in via openingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·63 cites·20 claims
- 2990US6773954B1Methods of forming passive layers in organic memory cellsADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 10, 2004·62 cites·23 claims
- 3090US6703307B2Method of implantation after copper seed depositionADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 9, 2004·55 cites·22 claims
- 3190US6630741B1Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·58 cites·20 claims
- 3290US6387818B1Method of porous dielectric formation with anodic templateADVANCED MICRO DEVICES INC·Filed 2000·Granted May 14, 2002·54 cites·3 claims
- 3390US6368961B1Graded compound seed layers for semiconductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·50 cites·14 claims
- 3489US7799182B2Electroplating on roll-to-roll flexible solar cell substratesAPPLIED MATERIALS INC·Filed 2006·Granted Sep 21, 2010·13 cites·10 claims
- 3589US6770905B1Implantation for the formation of CuX layer in an organic memory deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·56 cites·20 claims
- 3689US6624075B1Method of reducing electromigration in a copper line by Zinc-Doping of a copper surface from an electroplated copper-zinc alloy thin film and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·46 cites·10 claims
- 3789US6455415B1Method of encapsulated copper (Cu) interconnect formationADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·49 cites·8 claims
- 3889US6291082B1Method of electroless ag layer formation for cu interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 18, 2001·59 cites·7 claims
- 3988US7256111B2Pretreatment for electroless depositionAPPLIED MATERIALS INC·Filed 2004·Granted Aug 14, 2007·40 cites·19 claims
- 4088US6455425B1Selective deposition process for passivating top interface of damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 24, 2002·53 cites·18 claims
- 4188US6433379B1Tantalum anodization for in-laid copper metallization capacitorADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 13, 2002·43 cites·31 claims
- 4287US6660633B1Method of reducing electromigration in a copper line by electroplating an interim copper-zinc alloy thin film on a copper surface and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·36 cites·10 claims
- 4387US6534865B1Method of enhanced fill of vias and trenchesADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·37 cites·10 claims
- 4486US7273813B2Wafer cleaning solution for cobalt electroless applicationAPPLIED MATERIALS INC·Filed 2005·Granted Sep 25, 2007·11 cites·12 claims
- 4586US6500743B1Method of copper-polysilicon T-gate formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·36 cites·14 claims
- 4686US6060383AMethod for making multilayered coaxial interconnect structureFiled 1998·Granted May 9, 2000·73 cites·17 claims
- 4785US6803267B1Silicon containing material for patterning polymeric memory elementADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·41 cites·21 claims
- 4884US6350687B1Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping filmADVANCED MICRO DEVICES INC·Filed 1999·Granted Feb 26, 2002·75 cites·10 claims
- 4983US8486562B2Thin film electrochemical energy storage device with three-dimensional anodic structureLOPATIN SERGEY D·Filed 2009·Granted Jul 16, 2013·5 cites·25 claims
- 5083US7879730B2Etch selectivity enhancement in electron beam activated chemical etchKLA TENCOR TECH CORP·Filed 2007·Granted Feb 1, 2011·11 cites·19 claims
Showing the top 50 of 164 patent records by PatentIndex Score.
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