Inventor · disambiguated record
Alexander L. Martin
Also filed as: MARTIN ALEXANDER · MARTIN ALEXANDER L · MARTIN ALEXANDER LEE
17 granted patents·3 pending applications·13 citations·filing 2005–2024
88Inventor score
Top patents by PatentIndex Score
20 records- 0185US11652142B2Lateral bipolar junction transistors having an emitter extension and a halo regionGLOBALFOUNDRIES US INC·Filed 2021·Granted May 16, 2023·1 cites·20 claims
- 0283US11575029B2Lateral bipolar junction transistor and methodGLOBALFOUNDRIES US INC·Filed 2021·Granted Feb 7, 2023·1 cites·20 claims
- 0380US11152496B2IC structure base and inner E/C material on raised insulator, and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 19, 2021·1 cites·20 claims
- 0478US12159926B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 0578US11133397B2Method for forming lateral heterojunction bipolar devices and the resulting devicesGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 28, 2021·2 cites·17 claims
- 0669US11810969B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 7, 2023·0 cites·19 claims
- 0767US8039366B2Method for providing rotationally symmetric alignment marks for an alignment system that requires asymmetric geometric layoutIBM·Filed 2009·Granted Oct 18, 2011·3 cites·20 claims
- 0867US7700946B2Structure for reducing prior level edge interference with critical dimension measurementIBM·Filed 2008·Granted Apr 20, 2010·2 cites·4 claims
- 0966US11011303B2Dummy fill with eddy current self-canceling element for inductor componentGLOBALFOUNDRIES US INC·Filed 2018·Granted May 18, 2021·1 cites·19 claims
- 1066US7645620B2Method and structure for reducing prior level edge interference with critical dimension measurementIBM·Filed 2005·Granted Jan 12, 2010·2 cites·8 claims
- 1162US11837460B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 1259US2025248088A1Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layerGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1356US11588044B2Bipolar junction transistor (BJT) structure and related methodGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 1455US11500198B2Waveguide bus with balanced optical waveguides and method, system, and software tool for automatic generation of a layout for the waveguide busGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 15, 2022·0 cites·20 claims
- 1553US11276770B2Gate controlled lateral bipolar junction/heterojunction transistorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 15, 2022·0 cites·19 claims
- 1652US2010211437A1Method and Device for Determining a Contact Point in Time for Contacting a Money Transfer SystemWINCOR NIXDORF INT GMBH·Filed 2007·Application pending·0 cites
- 1749US11127843B2Asymmetrical lateral heterojunction bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·0 cites·20 claims
- 1849US11094805B2Lateral heterojunction bipolar transistors with asymmetric junctionsGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 1948US11610839B2Dummy fill structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Mar 21, 2023·0 cites·19 claims
- 2047US2023032080A1Asymmetric lateral bipolar transistor and methodGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →