Inventor · disambiguated record
Tatsunori Kaneoka
Also filed as: KANEOKA TATSUNORI
11 granted patents·4 pending applications·39 citations·filing 1996–2015
86Inventor score
Files withRENESAS ELECTRONICS CORP6MITSUBISHI ELECTRIC CORP4RENESAS TECH CORP2FUJII YASUHIRO1KADOSHIMA MASARU1
Top patents by PatentIndex Score
15 records- 0183US8384187B2Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2010·Granted Feb 26, 2013·6 cites·8 claims
- 0272US8536017B2Method of manufacturing semiconductor deviceKADOSHIMA MASARU·Filed 2012·Granted Sep 17, 2013·4 cites·5 claims
- 0360US8372718B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Feb 12, 2013·1 cites·14 claims
- 0456US5902702APhase shift mask, blank for phase shift mask, and method of manufacturing phase shift maskMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 11, 1999·17 cites·18 claims
- 0555US6344394B1Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 5, 2002·11 cites·3 claims
- 0652US9029237B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted May 12, 2015·0 cites·6 claims
- 0751US9105739B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 11, 2015·0 cites·5 claims
- 0849US2015221722A1Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 0947US9455264B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 27, 2016·0 cites·9 claims
- 1040US2007205458A1Non-Volatile Semiconductor Memory and Manufacturing Process ThereofYAMAMOTO SATOSHI·Filed 2007·Application pending·0 cites
- 1138US8288232B2Manufacturing method of semiconductor device and semiconductor deviceFUJII YASUHIRO·Filed 2010·Granted Oct 16, 2012·0 cites·3 claims
- 1238US2006166440A1Semiconductor nonvolatile memory device, and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1336US6605503B2Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layerMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 12, 2003·0 cites·6 claims
- 1435US6448189B1Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layerMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 10, 2002·0 cites·3 claims
- 1535US2005269602A1Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →