Inventor · disambiguated record
Byeong-Yun Nam
Also filed as: NAM BYEONG-YUN
27 granted patents·1 pending application·244 citations·filing 1996–2011
96Inventor score
Top patents by PatentIndex Score
28 records- 0181US7247540B2Methods of forming field effect transistors having recessed channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·7 cites·17 claims
- 0279US6573168B2Methods for forming conductive contact body for integrated circuits using dummy dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 3, 2003·28 cites·34 claims
- 0378US6573551B1Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 3, 2003·23 cites·10 claims
- 0475US7132708B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 7, 2006·6 cites·4 claims
- 0572US6885052B2Semiconductor memory device having self-aligned contacts and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 26, 2005·17 cites·15 claims
- 0669US7125766B2Method of forming capacitor for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 24, 2006·4 cites·20 claims
- 0766US7867841B2Methods of forming semiconductor devices with extended active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·4 cites·12 claims
- 0862US6680511B2Integrated circuit devices providing improved short preventionSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 20, 2004·9 cites·18 claims
- 0962US6576963B2Semiconductor device having transistorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 10, 2003·9 cites·17 claims
- 1061US7226867B2Method of etching a metal layer using a mask, a metallization method for a semiconductor device, a method of etching a metal layer, and an etching gasSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 5, 2007·7 cites·25 claims
- 1161US6953744B2Methods of fabricating integrated circuit devices providing improved short preventionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 11, 2005·8 cites·17 claims
- 1259US6429107B2Method for forming conductive contact of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 6, 2002·9 cites·24 claims
- 1359US6169009B1Methods of etching platinum group metal film and forming lower electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 2, 2001·25 cites·6 claims
- 1458US7312130B2Methods of forming capacitor structures including L-shaped cavitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·9 cites·22 claims
- 1557US6004882AMethod for etching Pt film of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 21, 1999·19 cites·10 claims
- 1656US6689654B2Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact padSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·6 cites·23 claims
- 1755US7009257B2Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 7, 2006·5 cites·12 claims
- 1854US6664585B2Semiconductor memory device having multilayered storage node contact plug and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 16, 2003·5 cites·10 claims
- 1952US6984568B2Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 10, 2006·4 cites·7 claims
- 2051US6054391AMethod for etching a platinum layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 25, 2000·18 cites·7 claims
- 2147US5693546AMethods of forming thin film transistors having lightly-doped drain and source regions thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 2, 1997·13 cites·10 claims
- 2246US6498081B2Method of manufacturing self-aligned contact holeSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 24, 2002·2 cites·19 claims
- 2343US7329574B2Methods of forming capacitor electrodes using fluorine and oxygenSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 12, 2008·0 cites·17 claims
- 2440US7060575B2Semiconductor device having transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 13, 2006·0 cites·21 claims
- 2539US6682975B2Semiconductor memory device having self-aligned contact and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 27, 2004·0 cites·10 claims
- 2639US6187686B1Methods for forming patterned platinum layers using masking layers including titanium and related structuresSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 13, 2001·7 cites·9 claims
- 2735US2001045666A1Semiconductor device having self-aligned contact and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Application pending·0 cites
- 2831US8835956B2Display substrate and method of manufacturing the samePARK ZIN-TAEK·Filed 2011·Granted Sep 16, 2014·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →