Inventor · disambiguated record
Mineo Okuyama
Also filed as: OKUYAMA MINEO
12 granted patents·3 pending applications·175 citations·filing 1998–2013
91Inventor score
Top patents by PatentIndex Score
15 records- 0184US6268618B1Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 1998·Granted Jul 31, 2001·69 cites·39 claims
- 0283US6852161B2Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting deviceSHOWA DENKO KK·Filed 2001·Granted Feb 8, 2005·31 cites·84 claims
- 0380US6403987B1Electrode for light-emitting semiconductor devicesSHOWA DENKO KK·Filed 2000·Granted Jun 11, 2002·25 cites·3 claims
- 0475US6326223B1Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 2000·Granted Dec 4, 2001·17 cites·8 claims
- 0568US7488971B2Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereofSHOWA DENKO KK·Filed 2004·Granted Feb 10, 2009·13 cites·26 claims
- 0666US8134168B2Group-III nitride semiconductor deviceSAKAI HIROMITSU·Filed 2004·Granted Mar 13, 2012·11 cites·14 claims
- 0763US7855386B2N-type group III nitride semiconductor layered structureSHOWA DENKO KK·Filed 2005·Granted Dec 21, 2010·2 cites·32 claims
- 0860US8987021B2Manufacturing method of light-emitting deviceTOYODA GOSEI KK·Filed 2013·Granted Mar 24, 2015·1 cites·9 claims
- 0956US6800501B2Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 2002·Granted Oct 5, 2004·4 cites·4 claims
- 1051US7057210B2Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 2004·Granted Jun 6, 2006·2 cites·2 claims
- 1139US2004232429A1Electrode for light-emitting semiconductor devices and method of producing the electrodeSHOWA DENKO KK·Filed 2004·Application pending·0 cites
- 1238US8236103B2Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial waferMIKI HISAYUKI·Filed 2003·Granted Aug 7, 2012·0 cites·13 claims
- 1338US2007184671A1Method for production of group lll nitride semiconductor deviceSHOWA DENKO KK·Filed 2004·Application pending·0 cites
- 1435US7402841B2Gallium nitride-based compound semiconductor light-emitting device and electrode for the sameSHOWA DENKO KK·Filed 2004·Granted Jul 22, 2008·0 cites·16 claims
- 1534US2002004254A1Method for producing p-type gallium nitride-based compound semiconductor, method for producing gallium nitride-based compound semiconductor light-emitting device, and gallium nitride-based compound semiconductor light-emitting deviceSHOWA DENKO KK·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →