Inventor · disambiguated record
Wolfgang Krautschneider
Also filed as: KRAUTSCHNEIDER WOLFGANG · KRAUTSCHNEIDER WOLFGANG H
51 granted patents·2,062 citations·filing 1991–2017
99Inventor score
Top patents by PatentIndex Score
51 records- 0199US6180979B1Memory cell arrangement with vertical MOS transistors and the production process thereofSIEMENS AG·Filed 1997·Granted Jan 30, 2001·534 cites·3 claims
- 0297US5994746AMemory cell configuration and method for its fabricationSIEMENS AG·Filed 1999·Granted Nov 30, 1999·191 cites·13 claims
- 0395US5710072AMethod of producing and arrangement containing self-amplifying dynamic MOS transistor memory cellsSIEMENS AG·Filed 1995·Granted Jan 20, 1998·145 cites·10 claims
- 0494US5959328AElectrically programmable memory cell arrangement and method for its manufactureSIEMENS AG·Filed 1997·Granted Sep 28, 1999·102 cites·11 claims
- 0592US6229169B1Memory cell configuration, method for fabricating it and methods for operating itINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 8, 2001·100 cites·10 claims
- 0691US6191459B1Electrically programmable memory cell array, using charge carrier traps and insulation trenchesINFINEON TECHNOLOGIES AG·Filed 1997·Granted Feb 20, 2001·103 cites·6 claims
- 0790US5973373ARead-only-memory cell arrangement using vertical MOS transistors and gate dielectrics of different thicknesses and method for its productionSIEMENS AG·Filed 1995·Granted Oct 26, 1999·73 cites·17 claims
- 0887US6180458B1Method of producing a memory cell configurationINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jan 30, 2001·48 cites·9 claims
- 0986US5998261AMethod of producing a read-only storage cell arrangementSIEMENS AG·Filed 1996·Granted Dec 7, 1999·58 cites·4 claims
- 1085US5817552AProcess of making a dram cell arrangementSIEMENS AG·Filed 1996·Granted Oct 6, 1998·56 cites·7 claims
- 1184US5821591AHigh density read only memory cell configuration and method for its productionSIEMENS AG·Filed 1997·Granted Oct 13, 1998·42 cites·10 claims
- 1282US6274453B1Memory cell configuration and production process thereforSIEMENS AG·Filed 1999·Granted Aug 14, 2001·43 cites·6 claims
- 1382US5854500ADRAM cell array with dynamic gain memory cellsSIEMENS AG·Filed 1996·Granted Dec 29, 1998·52 cites·5 claims
- 1482US5308783AProcess for the manufacture of a high density cell array of gain memory cellsSIEMENS AG·Filed 1992·Granted May 3, 1994·51 cites·6 claims
- 1580US5736761ADRAM cell arrangement and method for its manufactureSIEMENS AG·Filed 1996·Granted Apr 7, 1998·41 cites·13 claims
- 1679US6576948B2Integrated circuit configuration and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·20 cites·9 claims
- 1778US5333093AProtection apparatus for series pass MOSFETSSIEMENS AG·Filed 1991·Granted Jul 26, 1994·31 cites·15 claims
- 1877US5943572AElectrically writable and erasable read-only memory cell arrangement and method for its productionSIEMENS AG·Filed 1996·Granted Aug 24, 1999·36 cites·3 claims
- 1977US5327374AArrangement with self-amplifying dynamic MOS transistor storage cellsSIEMENS AG·Filed 1991·Granted Jul 5, 1994·42 cites·7 claims
- 2074US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 2172US6521935B2Mos transistor and dram cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 18, 2003·17 cites·8 claims
- 2271US6438022B2Memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·18 cites·7 claims
- 2368US5977589ADRAM cell arrangement and method for the production thereofSIEMENS AG·Filed 1998·Granted Nov 2, 1999·24 cites·7 claims
- 2467US5920778ARead-only memory cell arrangement and method for its productionSIEMENS AG·Filed 1996·Granted Jul 6, 1999·24 cites·8 claims
- 2567US5471417AFerroelectric memory cell arrangementSIEMENS AG·Filed 1991·Granted Nov 28, 1995·28 cites·12 claims
- 2661US5744393AMethod for production of a read-only-memory cell arrangement having vertical MOS transistorsSIEMENS AG·Filed 1995·Granted Apr 28, 1998·18 cites·9 claims
- 2760US6475866B2Method for production of a memory cell arrangementSIEMENS AG·Filed 2001·Granted Nov 5, 2002·6 cites·7 claims
- 2857US6399433B2Method for fabricating a memory cellINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 4, 2002·7 cites·10 claims
- 2956US7030434B1Arrangement with image sensorsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 18, 2006·6 cites·12 claims
- 3056US6442065B1Method for operating a memory cell configuration having dynamic gain memory cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 27, 2002·9 cites·24 claims
- 3155US6184045B1Method for DRAM cell arrangement and method for its productionSIEMENS AG·Filed 2000·Granted Feb 6, 2001·5 cites·4 claims
- 3250US6534820B2Integrated dynamic memory cell having a small area of extent, and a method for its productionINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 18, 2003·4 cites·16 claims
- 3349US5710448AIntegrated polysilicon diode contact for gain memory cellsSIEMENS AG·Filed 1995·Granted Jan 20, 1998·10 cites·20 claims
- 3448US6593614B1Integrated circuit configuration having at least one transistor and one capacitor, and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 15, 2003·3 cites·8 claims
- 3547US6445046B1Memory cell arrangement and process for manufacturing the sameSIEMENS AG·Filed 1997·Granted Sep 3, 2002·10 cites·6 claims
- 3647US6049105ADRAM cell arrangement having dynamic self-amplifying memory cells, and method for manufacturing sameSIEMENS AG·Filed 1998·Granted Apr 11, 2000·8 cites·7 claims
- 3744US6153475AMethod for the manufacturing a memory cell configurationSIEMENS AG·Filed 1997·Granted Nov 28, 2000·7 cites·7 claims
- 3844US5610540ALow power sensor amplifier for gain memory cellsSIEMENS AG·Filed 1996·Granted Mar 11, 1997·11 cites·20 claims
- 3942US6265748B1Storage cell arrangement in which vertical MOS transistors have at least three different threshold voltages depending on stored data, and method of producing said arrangementSIEMENS AG·Filed 1997·Granted Jul 24, 2001·5 cites·3 claims
- 4040US5990536AIntegrated circuit arrangement having at least two mutually insulated components, and method for its productionSIEMENS AG·Filed 1996·Granted Nov 23, 1999·9 cites·7 claims
- 4140US5920099ARead-only memory cell array and process for manufacturing itSIEMENS AG·Filed 1996·Granted Jul 6, 1999·5 cites·12 claims
- 4239US6064101ARead-only memory cell arrangementSIEMENS AG·Filed 1996·Granted May 16, 2000·5 cites·6 claims
- 4339US5882969AMethod for manufacturing an electrically writeable and erasable read-only memory cell arrangementSIEMENS AG·Filed 1997·Granted Mar 16, 1999·6 cites·5 claims
- 4436US6147376ADRAM cell arrangement and method for its productionSIEMENS AG·Filed 1999·Granted Nov 14, 2000·3 cites·4 claims
- 4535US6518628B1Integrated CMOS circuit configuration, and production of sameSIEMENS AG·Filed 1998·Granted Feb 11, 2003·3 cites·4 claims
- 4634US10881297B2In-situ sensorTECHNISCHE UNIV HAMBURG·Filed 2017·Granted Jan 5, 2021·0 cites·17 claims
- 4733US6125050AConfiguration for driving parallel lines in a memory cell configurationSIEMENS AG·Filed 1999·Granted Sep 26, 2000·3 cites·2 claims
- 4833US5854112ATransistor isolation processSIEMENS AG·Filed 1995·Granted Dec 29, 1998·3 cites·7 claims
- 4931US6274431B1Method for manufacturing an integrated circuit arrangement having at least one MOS transistorSIEMENS AG·Filed 1999·Granted Aug 14, 2001·1 cites·4 claims
- 5029US6066876AIntegrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layoutSIEMENS AG·Filed 1998·Granted May 23, 2000·0 cites·3 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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