Inventor · disambiguated record
Emmanuil H. Lingunis
Also filed as: LINGUNIS EMMANUIL · LINGUNIS EMMANUIL H
11 granted patents·1 pending application·262 citations·filing 2002–2007
92Inventor score
Top patents by PatentIndex Score
12 records- 0194US6927145B1Bitline hard mask spacer flow for memory cell scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·68 cites·17 claims
- 0288US6642148B1RELACS shrink method applied for single print resist mask for LDD or buried bitline implants using chemically amplified DUV type photoresistADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·46 cites·16 claims
- 0384US6963108B1Recessed channelADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 8, 2005·37 cites·35 claims
- 0482US6958272B2Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cellADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 25, 2005·27 cites·23 claims
- 0578US7091088B1UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processingSPANSION LLC·Filed 2004·Granted Aug 15, 2006·26 cites·10 claims
- 0677US6855608B1Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·17 cites·24 claims
- 0774US6933219B1Tightly spaced gate formation through damascene processADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 23, 2005·19 cites·12 claims
- 0859US7507661B2Method of forming narrowly spaced flash memory contact openings and lithography masksSPANSION LLC·Filed 2004·Granted Mar 24, 2009·6 cites·8 claims
- 0952US6720133B1Memory manufacturing process using disposable ARC for wordline formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 13, 2004·10 cites·20 claims
- 1051US7208382B1Semiconductor device with high conductivity region using shallow trenchADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 24, 2007·4 cites·14 claims
- 1147US7098546B1Alignment marks with salicided spacers between bitlines for alignment signal improvementFASL LLC·Filed 2004·Granted Aug 29, 2006·2 cites·20 claims
- 1246US2007166938A1Semiconductor device with high conductivity region using shallow trenchADVANCED MICRO DEVICES INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →