Inventor · disambiguated record
Pascal Guenard
Also filed as: GUENARD PASCAL
21 granted patents·2 pending applications·49 citations·filing 2008–2023
92Inventor score
Files withSOITEC SILICON ON INSULATOR14STAUBLI LYON3GUENARD PASCAL2BETHOUX JEAN-MARC1Commissariaat a l'energie atomique et aux ene alt1
Top patents by PatentIndex Score
23 records- 0196US11711065B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jul 25, 2023·5 cites·21 claims
- 0291US9478707B2Method of manufacturing structures of LEDs or solar cellsSOITEC SILICON ON INSULATOR·Filed 2013·Granted Oct 25, 2016·9 cites·14 claims
- 0391US7981767B2Methods for relaxation and transfer of strained layers and structures fabricated therebySOITEC SILICON ON INSULATOR·Filed 2008·Granted Jul 19, 2011·14 cites·19 claims
- 0484US10608610B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2016·Granted Mar 31, 2020·3 cites·18 claims
- 0583US12272540B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0683US7736935B2Passivation of semiconductor structures having strained layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jun 15, 2010·11 cites·15 claims
- 0781US12143093B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2023·Granted Nov 12, 2024·0 cites·14 claims
- 0880US10924081B2Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave deviceSOITEC SILICON ON INSULATOR·Filed 2020·Granted Feb 16, 2021·1 cites·30 claims
- 0977US12316298B2Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrateSOITEC SILICON ON INSULATOR·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1074US9865786B2Method of manufacturing structures of LEDs or solar cellsSOITEC SILICON ON INSULATOR·Filed 2016·Granted Jan 9, 2018·1 cites·13 claims
- 1170US11837463B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Dec 5, 2023·0 cites·20 claims
- 1268US8492244B2Methods for relaxation and transfer of strained layers and structures fabricated therebyGUENARD PASCAL·Filed 2011·Granted Jul 23, 2013·2 cites·21 claims
- 1357US9224921B2Method for forming a buried metal layer structureBETHOUX JEAN-MARC·Filed 2011·Granted Dec 29, 2015·1 cites·24 claims
- 1456US10943778B2Method for manufacturing a substrateSOITEC SILICON ON INSULATOR·Filed 2016·Granted Mar 9, 2021·0 cites·18 claims
- 1555US11702771B2Shedding mechanism and jacquard-type weaving loom equipped with such a mechanismSTAUBLI LYON·Filed 2021·Granted Jul 18, 2023·0 cites·16 claims
- 1655US9412904B2Structured substrate for LEDs with high light extractionCommissariaat a l'energie atomique et aux ene alt·Filed 2013·Granted Aug 9, 2016·1 cites·27 claims
- 1754USD1038180STextile machineSTAUBLI LYON·Filed 2023·Granted Aug 6, 2024·1 cites·1 claims
- 1854US11652464B2Surface acoustic wave device and associated production methodSOITEC SILICON ON INSULATOR·Filed 2016·Granted May 16, 2023·0 cites·20 claims
- 1951US2015155331A1Method of collective manufacture of leds and structure for collective manufacture of ledsSOITEC SILICON ON INSULATOR·Filed 2013·Application pending·0 cites
- 2041USD1090643STextile machineSTAUBLI LYON·Filed 2023·Granted Aug 26, 2025·0 cites·1 claims
- 2141US9041165B2Relaxation and transfer of strained material layersLETERTRE FABRICE·Filed 2010·Granted May 26, 2015·0 cites·15 claims
- 2236US8785293B2Adaptation of the lattice parameter of a layer of strained materialGUENARD PASCAL·Filed 2010·Granted Jul 22, 2014·0 cites·15 claims
- 2328US2012199956A1Method for recycling a source substrateLECOMTE MONIQUE·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →