Inventor · disambiguated record
Tetsuji Nagayama
Also filed as: NAGAYAMA TETSUJI
11 granted patents·466 citations·filing 1992–1999
93Inventor score
Files withSONY CORP11
Top patents by PatentIndex Score
11 records- 0188US5831321ASemiconductor device in which an anti-reflective layer is formed by varying the composition thereofSONY CORP·Filed 1996·Granted Nov 3, 1998·83 cites·9 claims
- 0287US5632910AMultilayer resist pattern forming methodSONY CORP·Filed 1994·Granted May 27, 1997·74 cites·12 claims
- 0385US5674356AMethod for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereofSONY CORP·Filed 1995·Granted Oct 7, 1997·72 cites·12 claims
- 0483US5378311AMethod of producing semiconductor deviceSONY CORP·Filed 1993·Granted Jan 3, 1995·84 cites·29 claims
- 0569US5368686ADry etching method for W polycide using sulfur depositionSONY CORP·Filed 1992·Granted Nov 29, 1994·45 cites·15 claims
- 0660US5997757AMethod of forming connection holeSONY CORP·Filed 1996·Granted Dec 7, 1999·26 cites·2 claims
- 0754US5354421ADry etching methodSONY CORP·Filed 1992·Granted Oct 11, 1994·23 cites·19 claims
- 0853US5369061AMethod of producing semiconductor device using a hydrogen-enriched layerSONY CORP·Filed 1993·Granted Nov 29, 1994·23 cites·13 claims
- 0950US6057243AMethod for producing semiconductor deviceSONY CORP·Filed 1999·Granted May 2, 2000·16 cites·9 claims
- 1041US5419809ADry etching methodSONY CORP·Filed 1994·Granted May 30, 1995·11 cites·13 claims
- 1138US5268070ADry etching methodSONY CORP·Filed 1992·Granted Dec 7, 1993·9 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →