Inventor · disambiguated record
Shinichi Miyakuni
Also filed as: MIYAKUNI SHINICHI
14 granted patents·1 pending application·240 citations·filing 1993–2019
92Inventor score
Top patents by PatentIndex Score
15 records- 0191US6013926ASemiconductor device with refractory metal elementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 11, 2000·110 cites·5 claims
- 0289US6570390B2Method for measuring surface leakage current of sampleRIGAKU DENKI CO LTD·Filed 2001·Granted May 27, 2003·43 cites·9 claims
- 0362US5942447AMethod of selectively etching compound semiconductor and method of manufacturing compound semiconductor device using the selective etching methodMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 24, 1999·27 cites·18 claims
- 0457US6791335B2Sample assembly for thermoelectric analyzerRIGAKU DENKI CO LTD·Filed 2001·Granted Sep 14, 2004·4 cites·13 claims
- 0551US5888859AMethod of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 30, 1999·18 cites·7 claims
- 0648US9117896B2Semiconductor device with improved conductivityMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 25, 2015·0 cites·7 claims
- 0746US11881516B2Semiconductor element comprising a MIM capacitor and a via hole, a bottom of the via hole being placed between a rear surface of a source electrode and a rear surface of a barrier metal layerMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jan 23, 2024·0 cites·20 claims
- 0846US5726468ACompound semiconductor bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 10, 1998·10 cites·5 claims
- 0945US12243739B2Semiconductor wafer and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Mar 4, 2025·0 cites·9 claims
- 1045US6271098B1Heterojunction bipolar transistor and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·2 cites·4 claims
- 1142US9805978B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Oct 31, 2017·0 cites·17 claims
- 1242US6081003AHeterojunction bipolar transistor with ballast resistorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 27, 2000·6 cites·5 claims
- 1339US5512331AEtching method for indium series compound semiconductorsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 30, 1996·10 cites·8 claims
- 1438US2007082427A1Method for manufacturing a compound semiconductor device having an improved via holeMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 1532US5370767ASelective dry etching method for compound semiconductor and production method of semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·10 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →