Inventor · disambiguated record
Dennis M. Hausmann
Also filed as: HAUSMANN DENNIS · HAUSMANN DENNIS M · HAUSMANN DENNIS MICHAEL
86 granted patents·19 pending applications·8,268 citations·filing 2001–2024
99Inventor score
Top patents by PatentIndex Score
105 records- 0199US9911595B1Selective growth of silicon nitrideLAM RES CORP·Filed 2017·Granted Mar 6, 2018·388 cites·17 claims
- 0299US9865815B2Bromine containing silicon precursors for encapsulation layersLAM RES CORP·Filed 2016·Granted Jan 9, 2018·434 cites·19 claims
- 0399US9601693B1Method for encapsulating a chalcogenide materialLAM RES CORP·Filed 2015·Granted Mar 21, 2017·43 cites·19 claims
- 0499US8647993B2Methods for UV-assisted conformal film depositionLAVOIE ADRIEN·Filed 2012·Granted Feb 11, 2014·487 cites·18 claims
- 0598US11209729B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2019·Granted Dec 28, 2021·21 cites·14 claims
- 0698US10831096B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2018·Granted Nov 10, 2020·34 cites·18 claims
- 0798US10514598B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2017·Granted Dec 24, 2019·33 cites·10 claims
- 0898US10043656B1Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxideLAM RES CORP·Filed 2017·Granted Aug 7, 2018·24 cites·13 claims
- 0998US10043655B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2017·Granted Aug 7, 2018·28 cites·20 claims
- 1098US9996004B2EUV photopatterning of vapor-deposited metal oxide-containing hardmasksLAM RES CORP·Filed 2015·Granted Jun 12, 2018·398 cites·20 claims
- 1198US9875891B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Jan 23, 2018·478 cites·15 claims
- 1298US9805941B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2017·Granted Oct 31, 2017·44 cites·26 claims
- 1398US9793110B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2016·Granted Oct 17, 2017·25 cites·16 claims
- 1498US9778561B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2015·Granted Oct 3, 2017·380 cites·9 claims
- 1598US9576811B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2015·Granted Feb 21, 2017·65 cites·26 claims
- 1698US9570274B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2015·Granted Feb 14, 2017·30 cites·11 claims
- 1798US9564312B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2014·Granted Feb 7, 2017·415 cites·14 claims
- 1898US9384998B2Technique to deposit sidewall passivation for high aspect ratio cylinder etchLAM RES CORP·Filed 2015·Granted Jul 5, 2016·32 cites·17 claims
- 1998US9257274B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2013·Granted Feb 9, 2016·523 cites·23 claims
- 2098US9214333B1Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALDLAM RES CORP·Filed 2014·Granted Dec 15, 2015·539 cites·21 claims
- 2198US9070555B2Method for depositing a chlorine-free conformal sin filmNOVELLUS SYSTEMS INC·Filed 2013·Granted Jun 30, 2015·31 cites·19 claims
- 2298US7790633B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2006·Granted Sep 7, 2010·643 cites·23 claims
- 2398US7482247B1Conformal nanolaminate dielectric deposition and etch bag gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·583 cites·27 claims
- 2498US7148155B1Sequential deposition/anneal film densification methodNOVELLUS SYSTEMS INC·Filed 2004·Granted Dec 12, 2006·416 cites·34 claims
- 2597US10665501B2Deposition of Aluminum oxide etch stop layersLAM RES CORP·Filed 2017·Granted May 26, 2020·22 cites·16 claims
- 2697US10454029B2Method for reducing the wet etch rate of a sin film without damaging the underlying substrateLAM RES CORP·Filed 2016·Granted Oct 22, 2019·11 cites·22 claims
- 2797US10361076B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2017·Granted Jul 23, 2019·17 cites·4 claims
- 2897US10186426B2Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)LAM RES CORP·Filed 2017·Granted Jan 22, 2019·16 cites·21 claims
- 2997US10141505B2Bromine containing silicon precursors for encapsulation layersLAM RES CORP·Filed 2017·Granted Nov 27, 2018·16 cites·20 claims
- 3097US9670579B2Method for depositing a chlorine-free conformal SiN filmNOVELLUS SYSTEMS INC·Filed 2015·Granted Jun 6, 2017·18 cites·20 claims
- 3197US8999859B2Plasma activated conformal dielectric film depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Apr 7, 2015·56 cites·25 claims
- 3297US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 3397US8637411B2Plasma activated conformal dielectric film depositionSWAMINATHAN SHANKAR·Filed 2011·Granted Jan 28, 2014·99 cites·44 claims
- 3496US10804099B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Oct 13, 2020·13 cites·16 claims
- 3596US10199212B2Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxideLAM RES CORP·Filed 2018·Granted Feb 5, 2019·14 cites·20 claims
- 3696US10176984B2Selective deposition of silicon oxideLAM RES CORP·Filed 2017·Granted Jan 8, 2019·11 cites·15 claims
- 3796US9859153B1Deposition of aluminum oxide etch stop layersLAM RES CORP·Filed 2016·Granted Jan 2, 2018·19 cites·20 claims
- 3896US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 3996US8592328B2Method for depositing a chlorine-free conformal sin filmHAUSMANN DENNIS·Filed 2012·Granted Nov 26, 2013·111 cites·20 claims
- 4096US8563414B1Methods for forming conductive carbon films by PECVDFOX KEITH·Filed 2010·Granted Oct 22, 2013·21 cites·18 claims
- 4196US7745346B2Method for improving process control and film conformality of PECVD filmNOVELLUS SYSTEMS INC·Filed 2008·Granted Jun 29, 2010·538 cites·23 claims
- 4296US6969539B2Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxideHARVARD COLLEGE·Filed 2001·Granted Nov 29, 2005·88 cites·31 claims
- 4395US10242866B2Selective deposition of silicon nitride on silicon oxide using catalytic controlLAM RES CORP·Filed 2017·Granted Mar 26, 2019·9 cites·17 claims
- 4495US9589790B2Method of depositing ammonia free and chlorine free conformal silicon nitride filmLAM RES CORP·Filed 2014·Granted Mar 7, 2017·22 cites·21 claims
- 4595US9548188B2Method of conditioning vacuum chamber of semiconductor substrate processing apparatusLAM RES CORP·Filed 2014·Granted Jan 17, 2017·18 cites·15 claims
- 4694US11133180B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2019·Granted Sep 28, 2021·6 cites·14 claims
- 4794US10629429B2Selective deposition of silicon oxideLAM RES CORP·Filed 2018·Granted Apr 21, 2020·6 cites·16 claims
- 4894US10559461B2Selective deposition with atomic layer etch resetLAM RES CORP·Filed 2017·Granted Feb 11, 2020·10 cites·7 claims
- 4994US10515816B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2018·Granted Dec 24, 2019·6 cites·18 claims
- 5094US7507848B2Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxideHARVARD COLLEGE·Filed 2005·Granted Mar 24, 2009·18 cites·11 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →