Inventor · disambiguated record
Bor-Shyang Liao
Also filed as: LIAO BOR-SHYANG
10 granted patents·29 citations·filing 2010–2014
84Inventor score
Top patents by PatentIndex Score
10 records- 0192US8766319B2Semiconductor device with ultra thin silicide layerLAI KUO-CHIH·Filed 2012·Granted Jul 1, 2014·16 cites·2 claims
- 0282US8598033B1Method for forming a salicide layerUNITED MICROELECTRONICS CORP·Filed 2012·Granted Dec 3, 2013·6 cites·13 claims
- 0370US8541303B2Method for fabricating MOS transistorLAI KUO-CHIH·Filed 2011·Granted Sep 24, 2013·2 cites·6 claims
- 0466US8877635B2Method for fabricating MOS transistorUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 4, 2014·1 cites·8 claims
- 0566US8815738B2Salicide processHSU CHIA-CHANG·Filed 2012·Granted Aug 26, 2014·3 cites·12 claims
- 0660US9318338B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 19, 2016·1 cites·10 claims
- 0755US8993390B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 31, 2015·0 cites·16 claims
- 0844US9685316B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 20, 2017·0 cites·8 claims
- 0934US8765588B2Semiconductor processHUANG PONG-WEY·Filed 2011·Granted Jul 1, 2014·0 cites·20 claims
- 1025US8450624B2Supporting substrate and method for fabricating the sameLEE MENG-HAN·Filed 2010·Granted May 28, 2013·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →