Inventor · disambiguated record
Jae Hyoung Koo
Also filed as: KOO JAE HYOUNG
8 granted patents·5 pending applications·23 citations·filing 2006–2015
79Inventor score
Files withHYNIX SEMICONDUCTOR INC9KIM BEOM-YONG1KOO JAE-HYOUNG1PARK KYUNG-WOONG1SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
13 records- 0194US9741854B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 22, 2017·16 cites·20 claims
- 0264US8278185B2Method for forming device isolation layer of semiconductor device and non-volatile memory deviceKOO JAE-HYOUNG·Filed 2009·Granted Oct 2, 2012·4 cites·7 claims
- 0362US7795123B2Method of forming gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 14, 2010·1 cites·12 claims
- 0462US7648923B2Method of fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jan 19, 2010·1 cites·15 claims
- 0553US7507644B2Method of forming dielectric layer of flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 24, 2009·1 cites·6 claims
- 0648US7674696B2Method of fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 9, 2010·0 cites·10 claims
- 0746US7592222B2Method of fabricating flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 22, 2009·0 cites·14 claims
- 0846US2009068850A1Method of Fabricating Flash Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 0946US2009124096A1Method of fabricating flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 1042US8962437B2Method for fabricating capacitor with high aspect ratioKIM BEOM-YONG·Filed 2012·Granted Feb 24, 2015·0 cites·6 claims
- 1142US2008160748A1Method of Forming Dielectric Layer of Flash Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1239US2008157181A1Non-volatile memory device and fabrication method thereofHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1338US2013171797A1Method for forming multi-component layer, method for forming multi-component dielectric layer and method for fabricating semiconductor devicePARK KYUNG-WOONG·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →