Inventor · disambiguated record
Masami Yamaoka
Also filed as: KUROYANAGI AKIRA · YAMAOKA MASAMI
30 granted patents·1 pending application·720 citations·filing 1985–2005
98Inventor score
Top patents by PatentIndex Score
31 records- 0193US4879254AMethod of manufacturing a DMOSNIPPON DENSO CO·Filed 1988·Granted Nov 7, 1989·94 cites·7 claims
- 0293US4760434ASemiconductor device with protective means against overheatingNIPPON DENSO CO·Filed 1986·Granted Jul 26, 1988·107 cites·12 claims
- 0385US4896199ASemiconductor device with protective means against overheatingNIPPON DENSO CO·Filed 1988·Granted Jan 23, 1990·59 cites·7 claims
- 0479US5689130AVertical semiconductor device with ground surface providing a reduced ON resistanceNIPPON DENSO CO·Filed 1995·Granted Nov 18, 1997·32 cites·51 claims
- 0579US5250449AVertical type semiconductor device and method for producing the sameNIPPON DENSO CO·Filed 1991·Granted Oct 5, 1993·45 cites·9 claims
- 0679US5242862ASemiconductor device and method of manufacturing sameNIPPON DENSO CO·Filed 1991·Granted Sep 7, 1993·38 cites·14 claims
- 0771US5313092ASemiconductor power device having walls of an inverted mesa shape to improve power handling capabilityNIPPON SOKEN·Filed 1992·Granted May 17, 1994·45 cites·19 claims
- 0871US5248623AMethod for making a polycrystalline diode having high breakdownNIPPON DENSO CO·Filed 1991·Granted Sep 28, 1993·32 cites·8 claims
- 0964US6903417B2Power semiconductor deviceDENSO CORP·Filed 2003·Granted Jun 7, 2005·4 cites·5 claims
- 1063US5204282ASemiconductor circuit structure and method for making the sameNIPPON SOKEN·Filed 1990·Granted Apr 20, 1993·34 cites·13 claims
- 1161US5360765AMethod of forming electrodes of semiconductor deviceNIPPON DENSO CO·Filed 1992·Granted Nov 1, 1994·20 cites·19 claims
- 1260US5663096AMethod of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistanceNIPPON DENSO CO·Filed 1995·Granted Sep 2, 1997·13 cites·8 claims
- 1358US5164218ASemiconductor device and a method for producing the sameNIPPON SOKEN·Filed 1991·Granted Nov 17, 1992·25 cites·13 claims
- 1457US5128823APower semiconductor apparatusNIPPON DENSO CO·Filed 1989·Granted Jul 7, 1992·22 cites·11 claims
- 1557US5072277ASemiconductor device with gradually varying doping levels to compensate for thickness variationsNIPPON DENSO CO·Filed 1990·Granted Dec 10, 1991·18 cites·15 claims
- 1656US6949434B2Method of manufacturing a vertical semiconductor deviceDENSO CORP·Filed 2004·Granted Sep 27, 2005·2 cites·18 claims
- 1755US5798550AVertical type semiconductor device and gate structureNIPPON DENSO CO·Filed 1995·Granted Aug 25, 1998·17 cites·10 claims
- 1854US2005227438A1Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2005·Application pending·0 cites
- 1952US5136348AStructure and manufacturing method for thin-film semiconductor diode deviceNIPPON DENSO CO·Filed 1991·Granted Aug 4, 1992·14 cites·6 claims
- 2051US5994187AMethod of manufacturing a vertical semiconductor deviceNIPPON DENSO CO·Filed 1997·Granted Nov 30, 1999·8 cites·32 claims
- 2151US4672402ASemiconductor circuit device including an overvoltage protection elementNIPPON DENSO CO·Filed 1986·Granted Jun 9, 1987·14 cites·3 claims
- 2250US5168337APolycrystalline diode and a method for making the sameNIPPON DENSO CO·Filed 1992·Granted Dec 1, 1992·13 cites·6 claims
- 2350US4994880ASemiconductor device constituting bipolar transistorNIPPON DENSO CO·Filed 1989·Granted Feb 19, 1991·13 cites·14 claims
- 2449US4680608ASemiconductor deviceNIPPON DENSO CO·Filed 1985·Granted Jul 14, 1987·12 cites·4 claims
- 2546US7064033B2Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2004·Granted Jun 20, 2006·0 cites·9 claims
- 2646US6498366B1Semiconductor device that exhibits decreased contact resistance between substrate and drain electrodeDENSO CORP·Filed 1997·Granted Dec 24, 2002·6 cites·75 claims
- 2744US6649478B2Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2002·Granted Nov 18, 2003·0 cites·5 claims
- 2844US5876861ASputter-deposited nickel layerNIPPON DENSO CO·Filed 1996·Granted Mar 2, 1999·9 cites·11 claims
- 2942US5461253ASemiconductor substrate structure for producing two isolated circuits on a same substrateNIPPON SOKEN·Filed 1994·Granted Oct 24, 1995·12 cites·19 claims
- 3040US5264720AHigh withstanding voltage transistorNIPPON DENSO CO·Filed 1992·Granted Nov 23, 1993·7 cites·9 claims
- 3133US5596217ASemiconductor device including overvoltage protection diodeNIPPON DENSO CO·Filed 1989·Granted Jan 21, 1997·5 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →