Inventor · disambiguated record
Sven Schmidbauer
Also filed as: SCHMIDBAUER SVEN
18 granted patents·6 pending applications·158 citations·filing 1999–2023
92Inventor score
Files withINFINEON TECHNOLOGIES AG10INFINEON TECHNOLOGIES AUSTRIA AG4QIMONDA AG3INFINEON TECHNOLOGIES DRESDEN GMBH2FITZ CLEMENS1
Top patents by PatentIndex Score
24 records- 0187US6221757B1Method of making a microelectronic structureINFINEON TECHNOLOGIES AG·Filed 1999·Granted Apr 24, 2001·100 cites·5 claims
- 0276US8652890B2Methods for fabricating integrated circuits with narrow, metal filled openingsSCHMIDBAUER SVEN·Filed 2012·Granted Feb 18, 2014·6 cites·17 claims
- 0374US12159854B2Semiconductor device having a layer stack, semiconductor arrangement and method for producing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 3, 2024·0 cites·13 claims
- 0470US10044005B2Electrode, an electronic device, and a method for manufacturing an optoelectronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Aug 7, 2018·1 cites·17 claims
- 0569US7718475B2Method for manufacturing an integrated circuit including a transistorQIMONDA AG·Filed 2007·Granted May 18, 2010·4 cites·24 claims
- 0668US11887961B2Semiconductor device, semiconductor arrangement and method for producing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jan 30, 2024·0 cites·15 claims
- 0766US6365510B2Method for fabricating a contact layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 2, 2002·15 cites·12 claims
- 0862US7341950B2Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layersINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 11, 2008·2 cites·39 claims
- 0959US6579786B2Method for depositing a two-layer diffusion barrierINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 17, 2003·9 cites·8 claims
- 1057US10978395B2Method of manufacturing a semiconductor device having a power metallization structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 13, 2021·0 cites·18 claims
- 1155US9419181B2Electrode, an electronic device, and a method for manufacturing an optoelectronic deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Aug 16, 2016·0 cites·14 claims
- 1254US2025151634A1Phase change switch with adhesion layerINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1351US10734320B2Power metallization structure for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 4, 2020·0 cites·18 claims
- 1451US6855630B1Method for making contact with a doping region of a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 15, 2005·6 cites·10 claims
- 1550US6602788B2Process for fabricating an interconnect for contact holesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 5, 2003·5 cites·19 claims
- 1648US7825013B2Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuitQIMONDA AG·Filed 2008·Granted Nov 2, 2010·0 cites·20 claims
- 1745US7214610B2Process for producing aluminum-filled contact holesINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 8, 2007·1 cites·18 claims
- 1843US2009050873A1System Including Memory with Resistivity Changing Material and Method of Making the SameQIMONDA AG·Filed 2008·Application pending·0 cites
- 1940US2006228876A1Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2036US6136709AMetal line deposition processINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Oct 24, 2000·6 cites·28 claims
- 2135US2008116494A1Method for manufacturing a semiconductor deviceGOLDBACH MATTHIAS·Filed 2006·Application pending·0 cites
- 2232US6403473B1Process for producing metal-containing layersINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jun 11, 2002·3 cites·13 claims
- 2332US2008124920A1Fabrication method for an integrated circuit structureFITZ CLEMENS·Filed 2007·Application pending·0 cites
- 2430US2005202617A1Gate structure for a transistor and method for fabricating the gate structureFiled 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →