Inventor · disambiguated record
Aurore Constant
Also filed as: Constant Aurore
9 granted patents·18 pending applications·18 citations·filing 2016–2025
82Inventor score
Files withST MICROELECTRONICS INT NV14SEMICONDUCTOR COMPONENTS IND LLC12SEMICONDUCTOR COMPONENTS IND1
Top patents by PatentIndex Score
27 records- 0189US9728629B1Electronic device including a polycrystalline compound semiconductor layer and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 8, 2017·7 cites·19 claims
- 0285US10032880B2Method for forming ohmic contactsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jul 24, 2018·4 cites·20 claims
- 0382US10504884B2Electronic device and circuit including a transistor and a variable resistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Dec 10, 2019·2 cites·18 claims
- 0479US11444090B2Semiconductor device having a programming elementSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 0576US10741494B2Electronic device including a contact structure contacting a layerSEMICONDUCTOR COMPONENTS IND·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 0676US10680092B2Electronic device including a transistor with a non-uniform 2DEGSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 0760US2024405115A1Hemt device having an improved conductivity and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0859US2024304710A1Hemt device having improved on-state performance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0959US2024304711A1Hemt device having a reduced on-resistance and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1058US2025142862A1Normally-on gan hemt integration on monolithic p-gan integrated circuitsST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1158US2024304713A1Hemt device having a reduced gate leakage and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1258US2024332413A1Hemt device having an improved gate structure and manufacturing process thereofST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1358US2024194763A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1458US2025142864A1In situ plasma treatment before al2o3 deposition for improved ronST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1558US2024266425A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1657US10790374B2Method for forming ohmic contactsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Sep 29, 2020·0 cites·20 claims
- 1757US2025142865A1Isolation of p-gan hemt by use of gate ringST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1857US2024274702A1Hemt transistorST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 1956US2025366136A1Normally-off hemt device with improved dynamic performances, and manufacturing method thereofST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2054US2025142928A1Back barrier integration scheme for gan devicesST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2150US11721736B2Electronic device including a gate structure and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 8, 2023·0 cites·17 claims
- 2248US2025280588A1Electronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2344US2022020857A1Gate contact interlayer for hemt devices with self-aligned electrodesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 2444US2022052163A1Gate control for hemt devices using dielectric between gate edges and gate field platesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 2543US2019334021A1Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the SameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
- 2641US11152497B2Variable resistance to reduce gate votlage oscillations in gallium nitride transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 19, 2021·0 cites·15 claims
- 2735US2019252509A1Electronic device including a conductive layer including a ta-si compound and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →