Inventor · disambiguated record
Shu-Jen Han
Also filed as: HAN SHU · HAN SHU-JEN
209 granted patents·17 pending applications·852 citations·filing 2005–2021
99Inventor score
Top patents by PatentIndex Score
226 records- 0198US9091648B2Carbon based biosensors and processes of manufacturing the sameIBM·Filed 2013·Granted Jul 28, 2015·26 cites·17 claims
- 0297US8975095B2Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencingIBM·Filed 2013·Granted Mar 10, 2015·21 cites·17 claims
- 0397US8557643B2Transistor device with reduced gate resistanceHAN SHU-JEN·Filed 2011·Granted Oct 15, 2013·31 cites·6 claims
- 0496US9577204B1Carbon nanotube field-effect transistor with sidewall-protected metal contactsIBM·Filed 2015·Granted Feb 21, 2017·11 cites·8 claims
- 0596US9147824B1Reactive contacts for 2D layered metal dichalcogenidesIBM·Filed 2014·Granted Sep 29, 2015·24 cites·21 claims
- 0696US8890121B1Integrated nanowire/nanosheet nanogap and nanopore for DNA and RNA sequencingIBM·Filed 2013·Granted Nov 18, 2014·17 cites·3 claims
- 0796US8890116B2Vertical stacking of carbon nanotube arrays for current enhancement and controlCHEN ZHIHONG·Filed 2012·Granted Nov 18, 2014·16 cites·19 claims
- 0896US8354309B2Method of providing threshold voltage adjustment through gate dielectric stack modificationIBM·Filed 2012·Granted Jan 15, 2013·24 cites·20 claims
- 0996US8288759B2Vertical stacking of carbon nanotube arrays for current enhancement and controlCHEN ZHIHONG·Filed 2010·Granted Oct 16, 2012·18 cites·19 claims
- 1095US10340002B1In-cell differential read-out circuitry for reading signed weight values in resistive processing unit architectureIBM·Filed 2018·Granted Jul 2, 2019·16 cites·20 claims
- 1195US9704965B1Semiconductor device with self-aligned carbon nanotube gateIBM·Filed 2016·Granted Jul 11, 2017·9 cites·13 claims
- 1295US9157887B2Graphene sensorIBM·Filed 2013·Granted Oct 13, 2015·19 cites·4 claims
- 1395US9097658B2Carbon based biosensors and processes of manufacturing the sameIBM·Filed 2012·Granted Aug 4, 2015·10 cites·14 claims
- 1495US9082856B2Graphene devices with local dual gatesCHEN ZHIHONG·Filed 2012·Granted Jul 14, 2015·17 cites·18 claims
- 1595US9076873B2Graphene devices with local dual gatesCHEN ZHIHONG·Filed 2011·Granted Jul 7, 2015·18 cites·10 claims
- 1695US8785911B2Graphene or carbon nanotube devices with localized bottom gates and gate dielectricCHEN ZHIHONG·Filed 2011·Granted Jul 22, 2014·25 cites·24 claims
- 1795US8735947B1Non-volatile graphene nanomechanical switchIBM·Filed 2012·Granted May 27, 2014·12 cites·15 claims
- 1894US9287516B2Forming pn junction contacts by different dielectricsIBM·Filed 2015·Granted Mar 15, 2016·9 cites·12 claims
- 1994US9142660B2Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functionsGUO DECHAO·Filed 2012·Granted Sep 22, 2015·17 cites·19 claims
- 2094US9103776B2Carbon based biosensors and processes of manufacturing the sameIBM·Filed 2013·Granted Aug 11, 2015·10 cites·15 claims
- 2194US9062389B2Electrochemical etching apparatusHAN SHU-JEN·Filed 2012·Granted Jun 23, 2015·15 cites·13 claims
- 2294US9045842B2Electrochemical etching apparatusHAN SHU-JEN·Filed 2012·Granted Jun 2, 2015·16 cites·15 claims
- 2393US9306028B2Graphene devices with local dual gatesIBM·Filed 2015·Granted Apr 5, 2016·7 cites·20 claims
- 2493US8765547B2Area-efficient capacitor using carbon nanotubesIBM·Filed 2013·Granted Jul 1, 2014·14 cites·18 claims
- 2593US8610172B2FETs with hybrid channel materialsGUO DECHAO·Filed 2011·Granted Dec 17, 2013·17 cites·21 claims
- 2693US8513081B2Carbon implant for workfunction adjustment in replacement gate transistorGUO DECHAO·Filed 2011·Granted Aug 20, 2013·12 cites·19 claims
- 2792US9299939B1Formation of CMOS device using carbon nanotubesIBM·Filed 2014·Granted Mar 29, 2016·12 cites·15 claims
- 2892US9068936B2Graphene sensorGUO DECHAO·Filed 2012·Granted Jun 30, 2015·11 cites·10 claims
- 2992US8866214B2Vertical transistor having an asymmetric gateGUO DECHAO·Filed 2011·Granted Oct 21, 2014·13 cites·11 claims
- 3092US8741756B2Contacts-first self-aligned carbon nanotube transistor with gate-all-aroundFRANKLIN AARON D·Filed 2012·Granted Jun 3, 2014·14 cites·20 claims
- 3192US8674412B2Contacts-first self-aligned carbon nanotube transistor with gate-all-aroundFRANKLIN AARON D·Filed 2012·Granted Mar 18, 2014·14 cites·20 claims
- 3291US8785262B2Self-aligned carbon nanostructure field effect transistors using selective dielectric depositionFARMER DAMON B·Filed 2012·Granted Jul 22, 2014·14 cites·11 claims
- 3391US8772782B2Transistor employing vertically stacked self-aligned carbon nanotubesCAO QING·Filed 2011·Granted Jul 8, 2014·26 cites·25 claims
- 3491US8766345B2Area-efficient capacitor using carbon nanotubesIBM·Filed 2012·Granted Jul 1, 2014·11 cites·18 claims
- 3591US8741700B1Non-volatile graphene nanomechanical switchIBM·Filed 2013·Granted Jun 3, 2014·8 cites·5 claims
- 3690US9102540B2Graphene nanomesh based charge sensorAFZALI-ARDAKANI ALI·Filed 2011·Granted Aug 11, 2015·10 cites·11 claims
- 3790US8786018B2Self-aligned carbon nanostructure field effect transistors using selective dielectric depositionFARMER DAMON B·Filed 2012·Granted Jul 22, 2014·12 cites·20 claims
- 3890US8569135B2Replacement gate electrode with planar work function material layersGUO DECHAO·Filed 2011·Granted Oct 29, 2013·10 cites·12 claims
- 3990US8455365B2Self-aligned carbon electronics with embedded gate electrodeGUO DECHAO·Filed 2011·Granted Jun 4, 2013·9 cites·18 claims
- 4089US11114605B2Composite storage layer for magnetic random access memory devicesHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 7, 2021·3 cites·26 claims
- 4189US9246112B2Semiconductor device with ballistic gate length structureIBM·Filed 2014·Granted Jan 26, 2016·6 cites·13 claims
- 4289US8471249B2Carbon field effect transistors having charged monolayers to reduce parasitic resistanceCHIU HSIN-YING·Filed 2011·Granted Jun 25, 2013·26 cites·24 claims
- 4388US10396300B2Carbon nanotube device with N-type end-bonded metal contactsIBM·Filed 2015·Granted Aug 27, 2019·6 cites·18 claims
- 4487US10295881B2Synaptic electronic devices with electrochromic deviceIBM·Filed 2015·Granted May 21, 2019·2 cites·4 claims
- 4587US10209186B2Chemical sensing based on plasmon resonance in carbon nanotubesIBM·Filed 2017·Granted Feb 19, 2019·2 cites·17 claims
- 4687US9064842B2Semiconductor device including graphene layer and method of making the semiconductor deviceBOL AGEETH ANKE·Filed 2012·Granted Jun 23, 2015·12 cites·23 claims
- 4787US8519454B2Structure and process for metal fill in replacement metal gate integrationGUO DECHAO·Filed 2011·Granted Aug 27, 2013·9 cites·22 claims
- 4886US10830647B2Multispectral plasmonic thermal imaging deviceIBM·Filed 2019·Granted Nov 10, 2020·2 cites·4 claims
- 4986US9835584B2Remote sensing using pulse-width modulationIBM·Filed 2015·Granted Dec 5, 2017·2 cites·8 claims
- 5086US9748334B1Fabrication of nanomaterial T-gate transistors with charge transfer doping layerIBM·Filed 2016·Granted Aug 29, 2017·4 cites·10 claims
Showing the top 50 of 226 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →