Inventor · disambiguated record
Haruyuki Sorada
Also filed as: SORADA HARUYUKI
24 granted patents·2 pending applications·323 citations·filing 2000–2015
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD10PANASONIC CORP4SORADA HARUYUKI3FUJII SATORU2HIMENO ATSUSHI2
Top patents by PatentIndex Score
26 records- 0197US6740928B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 25, 2004·154 cites·5 claims
- 0291US8618526B2Nonvolatile memory device and manufacturing method thereofSORADA HARUYUKI·Filed 2011·Granted Dec 31, 2013·15 cites·13 claims
- 0391US7554139B2Semiconductor manufacturing method and semiconductor devicePANASONIC CORP·Filed 2005·Granted Jun 30, 2009·21 cites·24 claims
- 0489US6548825B1Semiconductor device including barrier layer having dispersed particlesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 15, 2003·43 cites·37 claims
- 0584US9214628B2Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the sameHIMENO ATSUSHI·Filed 2011·Granted Dec 15, 2015·6 cites·17 claims
- 0683US8592798B2Non-volatile storage device and method for manufacturing the sameMIKAWA TAKUMI·Filed 2011·Granted Nov 26, 2013·7 cites·9 claims
- 0783US8581225B2Variable resistance nonvolatile memory device and method of manufacturing the sameHIMENO ATSUSHI·Filed 2011·Granted Nov 12, 2013·7 cites·18 claims
- 0878US9130036B2Semiconductor device and method for manufacturing samePANASONIC IP MAN CO LTD·Filed 2013·Granted Sep 8, 2015·4 cites·17 claims
- 0972US7235830B2Semiconductor device and process for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 26, 2007·4 cites·15 claims
- 1071US7473967B2Strained channel finFET devicePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·19 cites·4 claims
- 1168US8486788B2Semiconductor device and method for fabricating the sameIWANAGA JUNKO·Filed 2011·Granted Jul 16, 2013·2 cites·12 claims
- 1268US7119417B2Semiconductor device and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 10, 2006·13 cites·6 claims
- 1361US6987065B2Method of manufacturing self aligned electrode with field insulationMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 17, 2006·8 cites·22 claims
- 1459US6861316B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 1, 2005·7 cites·8 claims
- 1558US8563987B2Semiconductor device and method for fabricating the deviceSORADA HARUYUKI·Filed 2012·Granted Oct 22, 2013·1 cites·17 claims
- 1658US7564073B2CMOS and HCMOS semiconductor integrated circuitPANASONIC CORP·Filed 2005·Granted Jul 21, 2009·1 cites·8 claims
- 1757US8900965B2Nonvolatile memory device manufacturing methodSORADA HARUYUKI·Filed 2012·Granted Dec 2, 2014·1 cites·12 claims
- 1852US6917075B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jul 12, 2005·4 cites·11 claims
- 1948US7986002B2FINFET-type semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jul 26, 2011·1 cites·20 claims
- 2047US7126170B2MISFET for reducing leakage currentMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Oct 24, 2006·3 cites·9 claims
- 2147US2012292588A1Nonvolatile memory deviceFUJII SATORU·Filed 2011·Application pending·0 cites
- 2246US7087473B2Method of forming conventional complementary MOS transistors and complementary heterojunction MOS transistors on common substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 8, 2006·2 cites·5 claims
- 2343US7145168B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Dec 5, 2006·0 cites·6 claims
- 2436US2007108514A1Semiconductor device and method of fabricating the sameINOUE AKIRA·Filed 2004·Application pending·0 cites
- 2535US9543427B2Semiconductor device and method for fabricating the samePANASONIC IP MAN CO LTD·Filed 2015·Granted Jan 10, 2017·0 cites·5 claims
- 2633US9012294B2Manufacturing method of non-volatile memory deviceFUJII SATORU·Filed 2011·Granted Apr 21, 2015·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →