Inventor · disambiguated record
Sidhartha Sen
Also filed as: SEN SIDHARTHA
11 granted patents·108 citations·filing 1999–2006
90Inventor score
Top patents by PatentIndex Score
11 records- 0179US7633152B2Heat dissipation in integrated circuitsAGERE SYSTEMS INC·Filed 2006·Granted Dec 15, 2009·10 cites·18 claims
- 0273US6331484B1Titanium-tantalum barrier layer film and method for forming the sameLUCENT TECHNOLOGIES INC·Filed 2000·Granted Dec 18, 2001·20 cites·41 claims
- 0363US6656850B2Method for in-situ removal of side walls in MOM capacitor formationAGERE SYSTEMS INC·Filed 2002·Granted Dec 2, 2003·7 cites·8 claims
- 0461US6576522B2Methods for deuterium sinteringAGERE SYSTEMS INC·Filed 2000·Granted Jun 10, 2003·10 cites·9 claims
- 0557US6187665B1Process for deuterium passivation and hot carrier immunityLUCENT TECHNOLOGIES INC·Filed 1999·Granted Feb 13, 2001·23 cites·21 claims
- 0655US7151059B2MOS transistor and method of manufactureAGERE SYSTEMS INC·Filed 2004·Granted Dec 19, 2006·4 cites·15 claims
- 0752US6323078B1Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed therebyAGERE SYST GUARDIAN CORP·Filed 1999·Granted Nov 27, 2001·11 cites·15 claims
- 0850US6764930B2Method and structure for modular, highly linear MOS capacitors using nitrogen implantationAGERE SYSTEMS INC·Filed 2001·Granted Jul 20, 2004·5 cites·21 claims
- 0946US6495875B2Method of forming metal oxide metal capacitors using multi-step rapid material thermal process and a device formed therebyAGERE SYSTEMS INC·Filed 2001·Granted Dec 17, 2002·2 cites·6 claims
- 1046US6458648B1Method for in-situ removal of side walls in MOM capacitor formationAGERE SYST GUARDIAN CORP·Filed 1999·Granted Oct 1, 2002·10 cites·20 claims
- 1136US6674151B1Deuterium passivated semiconductor device having enhanced immunity to hot carrier effectsAGERE SYSTEMS INC·Filed 1999·Granted Jan 6, 2004·6 cites·14 claims
Join the waitlist — get patent alerts
Get an alert when Sidhartha Sen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →