Inventor · disambiguated record
Johann Christian Rode
Also filed as: RODE JOHANN · RODE JOHANN C · RODE JOHANN CHRISTIAN
19 granted patents·5 pending applications·3 citations·filing 2018–2021
87Inventor score
Files withINTEL CORP24
Top patents by PatentIndex Score
24 records- 0178US11588037B2Planar transistors with wrap-around gates and wrap-around source and drain contactsINTEL CORP·Filed 2019·Granted Feb 21, 2023·2 cites·20 claims
- 0272US11881511B2Superlattice FINFET with tunable drive current capabilityINTEL CORP·Filed 2018·Granted Jan 23, 2024·1 cites·14 claims
- 0355US11715790B2Charge-induced threshold voltage tuning in III-N transistorsINTEL CORP·Filed 2019·Granted Aug 1, 2023·0 cites·19 claims
- 0455US11658217B2Transistors with ion- or fixed charge-based field plate structuresINTEL CORP·Filed 2019·Granted May 23, 2023·0 cites·25 claims
- 0554US11610971B2Cap layer on a polarization layer to preserve channel sheet resistanceINTEL CORP·Filed 2018·Granted Mar 21, 2023·0 cites·19 claims
- 0652US11848362B2III-N transistors with contacts of modified widthsINTEL CORP·Filed 2019·Granted Dec 19, 2023·0 cites·20 claims
- 0752US11527532B2Enhancement-depletion cascode arrangements for enhancement mode III-N transistorsINTEL CORP·Filed 2019·Granted Dec 13, 2022·0 cites·20 claims
- 0851US12027613B2III-N transistor arrangements for reducing nonlinearity of off-state capacitanceINTEL CORP·Filed 2019·Granted Jul 2, 2024·0 cites·20 claims
- 0951US11757027B2E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdownINTEL CORP·Filed 2018·Granted Sep 12, 2023·0 cites·18 claims
- 1051US11652143B2III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectricsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·24 claims
- 1151US11581313B2Integration of III-N transistors and non-III-N transistors by semiconductor regrowthINTEL CORP·Filed 2019·Granted Feb 14, 2023·0 cites·20 claims
- 1250US12148757B2Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator materialINTEL CORP·Filed 2019·Granted Nov 19, 2024·0 cites·20 claims
- 1349US11450617B2Transmission line structures for III-N devicesINTEL CORP·Filed 2019·Granted Sep 20, 2022·0 cites·20 claims
- 1448US11587924B2Integration of passive components in III-N devicesINTEL CORP·Filed 2019·Granted Feb 21, 2023·0 cites·14 claims
- 1547US11688788B2Transistor gate structure with hybrid stacks of dielectric materialINTEL CORP·Filed 2018·Granted Jun 27, 2023·0 cites·17 claims
- 1647US11670709B2III-N transistors with local stressors for threshold voltage controlINTEL CORP·Filed 2019·Granted Jun 6, 2023·0 cites·20 claims
- 1746US11502191B2Transistors with backside field plate structuresINTEL CORP·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 1846US2022068910A1Iii-n transistors with integrated linearization devicesINTEL CORP·Filed 2020·Application pending·0 cites
- 1945US12439627B2Gate structures to enable lower subthreshold slope in gallium nitride-based transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·25 claims
- 2045US11626513B2Antenna gate field plate on 2DEG planar FETINTEL CORP·Filed 2018·Granted Apr 11, 2023·0 cites·15 claims
- 2142US2020227407A1Integration of iii-n transistors and polysilicon resistorsINTEL CORP·Filed 2019·Application pending·0 cites
- 2242US2020395358A1Co-integration of extended-drain and self-aligned iii-n transistors on a single dieINTEL CORP·Filed 2019·Application pending·0 cites
- 2341US2023132548A1Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 2440US2020219772A1Maskless process for fabricating gate structures and schottky diodesINTEL CORP·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →