Inventor · disambiguated record
Ian Wylie
Also filed as: WYLIE IAN · WYLIE IAN W · WYLIE IAN WAKEFIELD
18 granted patents·3 pending applications·251 citations·filing 1993–2018
94Inventor score
Files withCABOT MICROELECTRONICS CORP5ADVANCED DIAMOND TECH INC4AGERE SYSTEMS INC4ADVANCED DIAMOND TECHNOLOGIES INC2NORTHERN TELECOM LTD2
Top patents by PatentIndex Score
21 records- 0189US6630699B1Transistor device having an isolation structure located under a source region, drain region and channel region and a method of manufacture thereofLUCENT TECHNOLOGIES INC·Filed 2000·Granted Oct 7, 2003·65 cites·27 claims
- 0285US8232559B2Controlling diamond film surfaces and layeringWEST CHARLES·Filed 2011·Granted Jul 31, 2012·10 cites·23 claims
- 0383US10259727B2Electrochemical system and method for on-site generation of oxidants at high current densityADVANCED DIAMOND TECH INC·Filed 2018·Granted Apr 16, 2019·1 cites·26 claims
- 0483US10046989B2Electrochemical system and method for on-site generation of oxidants at high current densityADVANCED DIAMOND TECH INC·Filed 2015·Granted Aug 14, 2018·2 cites·23 claims
- 0583US7091604B2Three dimensional integrated circuitsCABOT MICROELECTRONICS CORP·Filed 2004·Granted Aug 15, 2006·35 cites·20 claims
- 0679US7456482B2Carbon nanotube-based electronic switchCABOT MICROELECTRONICS CORP·Filed 2005·Granted Nov 25, 2008·11 cites·16 claims
- 0778US8227350B2Controlling diamond film surfaces and layeringWEST CHARLES·Filed 2009·Granted Jul 24, 2012·7 cites·29 claims
- 0875US7438795B2Electrochemical-mechanical polishing systemCABOT MICROELECTRONICS CORP·Filed 2004·Granted Oct 21, 2008·17 cites·23 claims
- 0975US5320972AMethod of forming a bipolar transistorNORTHERN TELECOM LTD·Filed 1993·Granted Jun 14, 1994·33 cites·27 claims
- 1073US6853048B1Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereofAGERE SYSTEMS INC·Filed 2000·Granted Feb 8, 2005·20 cites·34 claims
- 1169US6958518B2Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2001·Granted Oct 25, 2005·18 cites·26 claims
- 1264US6864547B2Semiconductor device having a ghost source/drain region and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2001·Granted Mar 8, 2005·13 cites·22 claims
- 1356US2014174942A1Electrochemical System and Method for On-Site Generation of Oxidants at High Current DensityADVANCED DIAMOND TECHNOLOGIES INC·Filed 2013·Application pending·0 cites
- 1454US7052364B2Real time polishing process monitoringCABOT MICROELECTRONICS CORP·Filed 2004·Granted May 30, 2006·5 cites·36 claims
- 1551US10907264B2Extreme durability composite diamond electrodesADVANCED DIAMOND TECH INC·Filed 2016·Granted Feb 2, 2021·0 cites·32 claims
- 1651US5428243ABipolar transistor with a self-aligned heavily doped collector region and base link regions.NORTHERN TELECOM LTD·Filed 1993·Granted Jun 27, 1995·12 cites·12 claims
- 1745US10662523B2Extreme durability composite diamond filmADVANCED DIAMOND TECH INC·Filed 2016·Granted May 26, 2020·0 cites·33 claims
- 1844US2013299361A1System and Method for Treatment of Wastewater to Destroy Organic Contaminants by a Diamond Activated Electrochemical Advanced Oxidation ProcessADVANCED DIAMOND TECHNOLOGIES INC·Filed 2013·Application pending·0 cites
- 1935US2005148289A1Micromachining by chemical mechanical polishingCABOT MICROELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 2034US6569744B2Method of converting a metal oxide semiconductor transistor into a bipolar transistorAGERE SYSTEMS INC·Filed 2001·Granted May 27, 2003·0 cites·23 claims
- 2132US6444536B2Method for fabricating bipolar transistorsAGERE SYST GUARDIAN CORP·Filed 1999·Granted Sep 3, 2002·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →