Inventor · disambiguated record
Joe Fulton
Also filed as: FULTON JOE · FULTON JOE A
11 granted patents·5 pending applications·300 citations·filing 1987–2016
92Inventor score
Files withSEMICONDUCTOR COMPONENTS IND10AT & T BELL LAB2SEMICONDUCTOR COMPONENTS IND LLC2AMERICAN TELEPHONE & TELEGRAPH1
Top patents by PatentIndex Score
16 records- 0192US7208385B2LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Apr 24, 2007·20 cites·16 claims
- 0292US4838347AThermal conductor assemblyAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Jun 13, 1989·87 cites·27 claims
- 0388US6448625B1High voltage metal oxide device with enhanced well regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Sep 10, 2002·46 cites·15 claims
- 0482US6773997B2Method for manufacturing a high voltage MOSFET semiconductor device with enhanced charge controllabilitySEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Aug 10, 2004·33 cites·8 claims
- 0575US6492679B1Method for manufacturing a high voltage MOSFET device with reduced on-resistanceSEMICONDUCTOR COMPONENTS IND·Filed 2001·Granted Dec 10, 2002·21 cites·4 claims
- 0673US9754931B2Circuit and an integrated circuit including a transistor and another component coupled theretoSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Sep 5, 2017·2 cites·20 claims
- 0772US4960612AThermal conductor assembly methodAT & T BELL LAB·Filed 1988·Granted Oct 2, 1990·30 cites·9 claims
- 0871US5304460AAnisotropic conductor techniquesAT & T BELL LAB·Filed 1992·Granted Apr 19, 1994·45 cites·29 claims
- 0963US6919598B2LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistanceFiled 2003·Granted Jul 19, 2005·9 cites·17 claims
- 1060US6507058B1Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making sameSEMICONDUCTOR COMPONENTS IND·Filed 2000·Granted Jan 14, 2003·7 cites·1 claims
- 1153US9773895B2Half-bridge HEMT circuit and an electronic package including the circuitSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 26, 2017·0 cites·19 claims
- 1236US2002098637A1High voltage laterally diffused metal oxide semiconductor with improved on resistance and method of manufactureSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 1335US2004108544A1High voltage mosfet with laterally varying drain doping and methodSEMICONDUCTOR COMPONENTS IND·Filed 2002·Application pending·0 cites
- 1433US2002125530A1High voltage metal oxide device with multiple p-regionsSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 1533US2002130361A1Semiconductor device with laterally varying p-top layersSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
- 1633US2002130360A1High voltage MOS device with no field oxide over the p-top regionSEMICONDUCTOR COMPONENTS IND·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →