Inventor · disambiguated record
Thomas Haneder
Also filed as: HANEDER THOMAS · HANEDER THOMAS PETER
19 granted patents·5 pending applications·371 citations·filing 1999–2006
94Inventor score
Top patents by PatentIndex Score
24 records- 0198US6798000B2Field effect transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 28, 2004·251 cites·24 claims
- 0278US6787832B2Semiconductor memory cell and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 7, 2004·23 cites·36 claims
- 0371US6438022B2Memory cell configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·18 cites·7 claims
- 0466US6707082B2Ferroelectric transistorINFINEON TECHNOLOGIES·Filed 2002·Granted Mar 16, 2004·14 cites·9 claims
- 0564US6614066B2Ferroelectric transistor and memory cell configuration with the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·12 cites·8 claims
- 0663US7911026B2Chip carrier with reduced interference signal sensitivityQIMONDA AG·Filed 2006·Granted Mar 22, 2011·3 cites·20 claims
- 0761US6538273B2Ferroelectric transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·9 cites·10 claims
- 0859US6737689B1FEMFET device and method for producing sameINFINEON TECHNOLOGIES AG·Filed 1999·Granted May 18, 2004·18 cites·6 claims
- 0952US6469887B2Capacitor for semiconductor configuration and method for fabricating a dielectric layer thereforINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 22, 2002·3 cites·8 claims
- 1050US7410794B2Device based on partially oxidized porous silicon and method for its productionINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 12, 2008·2 cites·6 claims
- 1150US7115897B2Semiconductor circuit configuration and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 3, 2006·4 cites·57 claims
- 1249US6455328B2Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalumINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 24, 2002·2 cites·6 claims
- 1347US2006263799A1Macroporous support for chemical amplification reactionsINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 1444US7049628B2Semiconductor memory cell and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 23, 2006·2 cites·56 claims
- 1543US6670661B2Ferroelectric memory cell with diode structure to protect the ferroelectric during read operationsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 30, 2003·2 cites·15 claims
- 1643US2005112652A1Device and method for detecting biochemical reactions and/or bindingsINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 1742US6894330B2Memory configuration and method for reading a state from and storing a state in a ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 17, 2005·4 cites·8 claims
- 1840US6815224B2Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layerINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 9, 2004·0 cites·12 claims
- 1939US6710388B2Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 23, 2004·2 cites·16 claims
- 2038US6552385B2DRAM memory capacitor having three-layer dielectric, and method for its productionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 22, 2003·0 cites·6 claims
- 2133US2004156754A1Pipetting device and method for producing the sameINFINEON TECHNOLOGIES AG·Filed 2003·Application pending·0 cites
- 2233US2003068639A1Detecting biochemical reactionsFiled 2002·Application pending·0 cites
- 2332US6944044B2Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrixINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 13, 2005·2 cites·20 claims
- 2430US2008308303A1Chip carrier substrate and production method thereforLEHMANN VOLKER·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →