Inventor · disambiguated record
Kanin Chu
Also filed as: CHU KANIN
13 granted patents·2 pending applications·188 citations·filing 2001–2020
91Inventor score
Files withBAE SYS INF & ELECT SYS INTEG3GEN ELECTRIC3ACTIS ROBERT2GUNTER LIBERTY L2BAE SYSTEMS INFORMATION1
Top patents by PatentIndex Score
15 records- 0195US6806508B2Homoepitaxial gallium nitride based photodetector and method of producingGEN ELECTRIC·Filed 2001·Granted Oct 19, 2004·100 cites·99 claims
- 0291US7291544B2Homoepitaxial gallium nitride based photodetector and method of producingGEN ELECTRIC·Filed 2004·Granted Nov 6, 2007·51 cites·17 claims
- 0378US8003504B2Structure and method for fabrication of field effect transistor gates with or without field platesBAE SYS INF & ELECT SYS INTEG·Filed 2007·Granted Aug 23, 2011·7 cites·13 claims
- 0477US8247843B2GaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2008·Granted Aug 21, 2012·5 cites·6 claims
- 0569US6646265B2Optical spectrometer and method for combustion flame temperature determinationGEN ELECTRIC·Filed 2001·Granted Nov 11, 2003·9 cites·13 claims
- 0661US10529820B2Method for gallium nitride on diamond semiconductor wafer productionBAE SYS INF & ELECT SYS INTEG·Filed 2015·Granted Jan 7, 2020·1 cites·20 claims
- 0760US7413958B2GaN-based permeable base transistor and method of fabricationBAE SYSTEMS INFORMATION·Filed 2004·Granted Aug 19, 2008·6 cites·16 claims
- 0857US8669812B2High power amplifierACTIS ROBERT·Filed 2011·Granted Mar 11, 2014·3 cites·21 claims
- 0954US9024326B2Method and design of an RF thru-via interconnectACTIS ROBERT·Filed 2012·Granted May 5, 2015·1 cites·18 claims
- 1054US8304332B2Structure and method for fabrication of field effect transistor gates with or without field platesIMMORLICA ANTHONY A·Filed 2011·Granted Nov 6, 2012·1 cites·3 claims
- 1153USRE42955EGaN-based permeable base transistor and method of fabricationGUNTER LIBERTY L·Filed 2004·Granted Nov 22, 2011·4 cites·16 claims
- 1252US11581299B2Flexible impedance network systemBAE SYS INF & ELECT SYS INTEG·Filed 2020·Granted Feb 14, 2023·0 cites·9 claims
- 1338US9136111B1Field effect transistors with gate electrodes having Ni and Ti metal layersCHU KANIN·Filed 2012·Granted Sep 15, 2015·0 cites·16 claims
- 1438US2013295757A1Short gate-length high electron-mobility transistors with asymmetric recess and self-aligned ohmic electrodesSYSTEMS INTEGRATION INC BAE SYSTEMS INFORMATION AND ELECTRONIC·Filed 2013·Application pending·0 cites
- 1537US2003080276A1Solar blind detector using SiC photodiode and rugate filterFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →