Inventor · disambiguated record
Atif Noori
Also filed as: NOORI ATIF · NOORI ATIF M
22 granted patents·2 pending applications·78 citations·filing 2008–2021
93Inventor score
Top patents by PatentIndex Score
24 records- 0196US9601339B2Methods for depositing fluorine/carbon-free conformal tungstenAPPLIED MATERIALS INC·Filed 2015·Granted Mar 21, 2017·13 cites·18 claims
- 0295US9230815B2Methods for depositing fluorine/carbon-free conformal tungstenAPPLIED MATERIALS INC·Filed 2013·Granted Jan 5, 2016·17 cites·20 claims
- 0393US9082702B2Atomic layer deposition methods for metal gate electrodesAPPLIED MATERIALS INC·Filed 2013·Granted Jul 14, 2015·18 cites·8 claims
- 0486US9145612B2Deposition of N-metal films comprising aluminum alloysAPPLIED MATERIALS INC·Filed 2013·Granted Sep 29, 2015·3 cites·18 claims
- 0585US8927059B2Deposition of metal films using alane-based precursorsAPPLIED MATERIALS INC·Filed 2012·Granted Jan 6, 2015·6 cites·19 claims
- 0681US9305780B2Self-limiting chemical vapor deposition and atomic layer deposition methodsAPPLIED MATERIALS INC·Filed 2014·Granted Apr 5, 2016·4 cites·12 claims
- 0781US7816205B2Method of forming non-volatile memory having charge trap layer with compositional gradientAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·5 cites·21 claims
- 0879US8987080B2Methods for manufacturing metal gatesAPPLIED MATERIALS INC·Filed 2013·Granted Mar 24, 2015·4 cites·20 claims
- 0977US9607920B2Self-limiting chemical vapor deposition and atomic layer deposition methodsAPPLIED MATERIALS INC·Filed 2016·Granted Mar 28, 2017·2 cites·18 claims
- 1076US11887855B2Methods for depositing fluorine/carbon-free conformal tungstenAPPLIED MATERIALS INC·Filed 2021·Granted Jan 30, 2024·0 cites·19 claims
- 1171US9443728B2Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processingAPPLIED MATERIALS INC·Filed 2014·Granted Sep 13, 2016·2 cites·20 claims
- 1271US8252653B2Method of forming a non-volatile memory having a silicon nitride charge trap layerBALSEANU MIHAELA·Filed 2008·Granted Aug 28, 2012·2 cites·23 claims
- 1362US9269574B2Methods of fabricating dielectric films from metal amidinate precursorsHUNG STEVEN·Filed 2013·Granted Feb 23, 2016·1 cites·7 claims
- 1462US8927438B2Methods for manufacturing high dielectric constant filmsKIM HYUNGJUN·Filed 2012·Granted Jan 6, 2015·1 cites·11 claims
- 1560US10985023B2Methods for depositing fluorine/carbon-free conformal tungstenAPPLIED MATERIALS INC·Filed 2017·Granted Apr 20, 2021·0 cites·14 claims
- 1659US9683287B2Deposition of films comprising aluminum alloys with high aluminum contentAPPLIED MATERIALS INC·Filed 2013·Granted Jun 20, 2017·0 cites·15 claims
- 1758US8501568B2Method of forming flash memory with ultraviolet treatmentBALSEANU MIHAELA·Filed 2008·Granted Aug 6, 2013·0 cites·20 claims
- 1853US9190320B2Devices including metal-silicon contacts using indium arsenide films and apparatus and methodsAPPLIED MATERIALS INC·Filed 2013·Granted Nov 17, 2015·0 cites·6 claims
- 1950US9441298B2Devices including metal-silicon contacts using indium arsenide films and apparatus and methodsAPPLIED MATERIALS INC·Filed 2015·Granted Sep 13, 2016·0 cites·9 claims
- 2050US9269584B2N-metal film deposition with initiation layerGANGULI SESHADRI·Filed 2012·Granted Feb 23, 2016·0 cites·20 claims
- 2145US2008182403A1Uv curing of pecvd-deposited sacrificial polymer films for air-gap ildNOORI ATIF·Filed 2008·Application pending·0 cites
- 2244US8592305B2Doping aluminum in tantalum silicideLU XINLIANG·Filed 2011·Granted Nov 26, 2013·0 cites·14 claims
- 2343US8895443B2N-metal film deposition with initiation layerGANGULI SESHADRI·Filed 2012·Granted Nov 25, 2014·0 cites·17 claims
- 2438US2012220116A1Dry Chemical Cleaning For Semiconductor ProcessingNOORI ATIF·Filed 2011·Application pending·0 cites
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