Inventor · disambiguated record
Tzu-Chung Wang
Also filed as: WANG TZU-CHUNG
40 granted patents·7 pending applications·113 citations·filing 2003–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD41JOJOMO ENTPR CO LTD2PAN TE-JEN1TAIWAN SEMICONDUCTOR MFG1TU CHE-HAO1
Top patents by PatentIndex Score
47 records- 0197US11721700B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·3 cites·20 claims
- 0296US11996472B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 0396US11245024B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
- 0494US11817488B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0594US10930498B2Methods for producing nanowire stack GAA device with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·6 cites·16 claims
- 0693US11600718B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
- 0792US2025366074A1Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0891US11387360B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 0990US11798849B2Semiconductor device with fin end spacer plug and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 1089US10707347B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·3 cites·20 claims
- 1187US11038034B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·3 cites·20 claims
- 1286USD482276SFood containerJOJOMO ENTPR CO LTD·Filed 2003·Granted Nov 18, 2003·35 cites·1 claims
- 1383US12382650B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1483US12302633B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1582US12224334B2Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1682US2024363735A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1781US12112987B2Semiconductor device with fin end spacer plug and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1881US2023387265A1Nanowire Stack GAA Device with Inner Spacer and Methods for Producing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1980US12046663B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2079US12021084B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 2179USD504052SFood containerJOJOMO ENTPR CO LTD·Filed 2004·Granted Apr 19, 2005·24 cites·1 claims
- 2278US12408387B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2378US12324214B2Method and related apparatus for integrating electronic memory in an integrated chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2477US12243930B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2576US11929425B2Nanowire stack GAA device with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·0 cites·20 claims
- 2676US11699739B2Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 11, 2023·0 cites·20 claims
- 2776USD504708SToy firemanFiled 2004·Granted May 3, 2005·20 cites·1 claims
- 2874US11626510B2Fin Field-Effect Transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 11, 2023·0 cites·20 claims
- 2974US8598028B2Gate height loss improvement for a transistorTU CHE-HAO·Filed 2011·Granted Dec 3, 2013·5 cites·15 claims
- 3074US2025142919A1Semiconductor device with gate dielectric formed using selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3173US2025176240A1Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3272US11189726B2Transistor with a negative capacitance and a method of creating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 3371US10797174B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·15 claims
- 3470US11233139B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·10 claims
- 3567US11605562B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3663US11444174B2Semiconductor device with Fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 3763US11244867B2Semiconductor device with fin end spacer plug and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·0 cites·20 claims
- 3863US11043578B2Nanowire stack GAA device with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·0 cites·19 claims
- 3959US10886180B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·20 claims
- 4059US2025159918A1Gate isolation featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4157US11955547B2Semiconductor device including an epitaxy regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 9, 2024·0 cites·20 claims
- 4254US10164093B2Semiconductor device including an epitaxy regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 4352US2025022746A1Isolation between device areasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4451US9748152B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·0 cites·20 claims
- 4546US9054125B2Method for making semiconductor device with gate profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 9, 2015·0 cites·17 claims
- 4645US9390985B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 4741US9595477B2Semiconductor device including an epitaxy regionPAN TE-JEN·Filed 2011·Granted Mar 14, 2017·0 cites·13 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →