Inventor · disambiguated record
Robert Beach
Also filed as: BEACH ROBERT · BEACH ROBERT G
76 granted patents·11 pending applications·715 citations·filing 1980–2025
99Inventor score
Files withINT RECTIFIER CORP36EFFICIENT POWER CONVERSION CORP20BEACH ROBERT13LIDOW ALEXANDER7CAO JIANJUN3
Top patents by PatentIndex Score
87 records- 0198US7382001B2Enhancement mode III-nitride FETINT RECTIFIER CORP·Filed 2005·Granted Jun 3, 2008·84 cites·14 claims
- 0297US7465997B2III-nitride bidirectional switchINT RECTIFIER CORP·Filed 2005·Granted Dec 16, 2008·63 cites·13 claims
- 0396US8823012B2Enhancement mode GaN HEMT device with gate spacer and method for fabricating the sameLIDOW ALEXANDER·Filed 2012·Granted Sep 2, 2014·31 cites·11 claims
- 0496US8404508B2Enhancement mode GaN HEMT device and method for fabricating the sameLIDOW ALEXANDER·Filed 2010·Granted Mar 26, 2013·27 cites·5 claims
- 0596US7550781B2Integrated III-nitride power devicesINT RECTIFIER CORP·Filed 2005·Granted Jun 23, 2009·46 cites·21 claims
- 0695US8431960B2Dopant diffusion modulation in GaN buffer layersBEACH ROBERT·Filed 2010·Granted Apr 30, 2013·26 cites·11 claims
- 0795US7759699B2III-nitride enhancement mode devicesINT RECTIFIER CORP·Filed 2006·Granted Jul 20, 2010·36 cites·13 claims
- 0894US10790811B2Cascaded bootstrapping GaN power switch and driverEFFICIENT POWER CONVERSION CORP·Filed 2019·Granted Sep 29, 2020·10 cites·16 claims
- 0994US8436398B2Back diffusion suppression structuresLIDOW ALEXANDER·Filed 2010·Granted May 7, 2013·21 cites·19 claims
- 1094US8174048B2III-nitride current control device and method of manufactureBEACH ROBERT·Filed 2005·Granted May 8, 2012·28 cites·14 claims
- 1194US7417257B2III-nitride device with improved layout geometryINT RECTIFIER CORP·Filed 2006·Granted Aug 26, 2008·28 cites·10 claims
- 1293US9607876B2Semiconductor devices with back surface isolationLIDOW ALEXANDER·Filed 2011·Granted Mar 28, 2017·13 cites·31 claims
- 1392US8350294B2Compensated gate MISFET and method for fabricating the sameEFFICIENT POWER CONVERSION CORP·Filed 2010·Granted Jan 8, 2013·16 cites·12 claims
- 1491US10312131B2Semiconductor devices with back surface isolationEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·7 cites·4 claims
- 1591US8890168B2Enhancement mode GaN HEMT deviceEFFICIENT POWER CONVERSION CORP·Filed 2013·Granted Nov 18, 2014·14 cites·17 claims
- 1691US7288803B2III-nitride power semiconductor device with a current sense electrodeINT RECTIFIER CORP·Filed 2005·Granted Oct 30, 2007·19 cites·17 claims
- 1789US10096702B2Multi-step surface passivation structures and methods for fabricating sameEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Oct 9, 2018·7 cites·24 claims
- 1889US9837438B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Dec 5, 2017·6 cites·8 claims
- 1989US9214461B2GaN transistors with polysilicon layers for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Dec 15, 2015·9 cites·12 claims
- 2089US8815715B2III-nitride wafer fabricationINT RECTIFIER CORP·Filed 2013·Granted Aug 26, 2014·7 cites·14 claims
- 2188US7973304B2III-nitride semiconductor deviceINT RECTIFIER CORP·Filed 2007·Granted Jul 5, 2011·8 cites·23 claims
- 2287US8853749B2Ion implanted and self aligned gate structure for GaN transistorsLIDOW ALEXANDER·Filed 2012·Granted Oct 7, 2014·8 cites·17 claims
- 2387US7491627B2III-nitride device and method with variable epitaxial growth directionINT RECTIFIER CORP·Filed 2007·Granted Feb 17, 2009·11 cites·12 claims
- 2486US8441030B2III-nitride multi-channel heterojunction interdigitated rectifierBEACH ROBERT·Filed 2005·Granted May 14, 2013·10 cites·21 claims
- 2585US8450721B2III-nitride power semiconductor deviceBEACH ROBERT·Filed 2011·Granted May 28, 2013·4 cites·17 claims
- 2683US8455920B2III-nitride heterojunction deviceBRIDGER PAUL·Filed 2008·Granted Jun 4, 2013·8 cites·24 claims
- 2782US10312260B2GaN transistors with polysilicon layers used for creating additional componentsEFFICIENT POWER CONVERSION CORP·Filed 2017·Granted Jun 4, 2019·3 cites·17 claims
- 2882US9171911B2Isolation structure in gallium nitride devices and integrated circuitsEFFICIENT POWER CONVERSION CORP·Filed 2014·Granted Oct 27, 2015·6 cites·26 claims
- 2982US7728355B2Nitrogen polar III-nitride heterojunction JFETINT RECTIFIER CORP·Filed 2007·Granted Jun 1, 2010·10 cites·18 claims
- 3081US8168000B2III-nitride semiconductor device fabricationBRIERE MIKE·Filed 2006·Granted May 1, 2012·6 cites·37 claims
- 3180US8557681B2III-nitride wafer fabricationHERMAN THOMAS·Filed 2007·Granted Oct 15, 2013·6 cites·19 claims
- 3279US7649215B2III-nitride device passivation and methodINT RECTIFIER CORP·Filed 2004·Granted Jan 19, 2010·23 cites·14 claims
- 3378US8952352B2III-nitride power deviceINT RECTIFIER CORP·Filed 2013·Granted Feb 10, 2015·2 cites·20 claims
- 3477US8916908B2III-nitride heterojunction deviceINT RECTIFIER CORP·Filed 2013·Granted Dec 23, 2014·3 cites·17 claims
- 3577US8865575B2Fabrication of III-nitride semiconductor device and related structuresINT RECTIFIER CORP·Filed 2013·Granted Oct 21, 2014·2 cites·20 claims
- 3676US7417267B2Non-planar III-nitride power device having a lateral conduction pathINT RECTIFIER CORP·Filed 2005·Granted Aug 26, 2008·6 cites·17 claims
- 3775US8174051B2III-nitride power deviceCAO JIANJUN·Filed 2007·Granted May 8, 2012·7 cites·20 claims
- 3875US8043906B2Method of forming a III-nitride selective current carrying device including a contact in a recessINT RECTIFIER CORP·Filed 2006·Granted Oct 25, 2011·5 cites·13 claims
- 3974US7652311B2III-nitride device with reduced piezoelectric polarizationINT RECTIFIER CORP·Filed 2007·Granted Jan 26, 2010·4 cites·17 claims
- 4072US10090274B2Flip chip interconnection with reduced current densityEFFICIENT POWER CONVERSION CORP·Filed 2015·Granted Oct 2, 2018·2 cites·15 claims
- 4172US9117671B2Fabrication of III-nitride semiconductor device and related structuresINT RECTIFIER CORP·Filed 2014·Granted Aug 25, 2015·1 cites·20 claims
- 4271US8969918B2Enhancement mode gallium nitride transistor with improved gate characteristicsLIDOW ALEXANDER·Filed 2010·Granted Mar 3, 2015·3 cites·1 claims
- 4370US7892938B2Structure and method for III-nitride monolithic power ICINT RECTIFIER CORP·Filed 2006·Granted Feb 22, 2011·3 cites·20 claims
- 4470US7439555B2III-nitride semiconductor device with trench structureINT RECTIFIER CORP·Filed 2004·Granted Oct 21, 2008·12 cites·20 claims
- 4570US4396102ALocking clutch assembly in a winchRAMSEY WINCH·Filed 1980·Granted Aug 2, 1983·23 cites·1 claims
- 4667US10622455B2Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thicknessEFFICIENT POWER CONVERSION CORP·Filed 2018·Granted Apr 14, 2020·1 cites·9 claims
- 4767US8785974B2Bumped, self-isolated GaN transistor chip with electrically isolated back surfaceLIDOW ALEXANDER·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 4866US8614129B2Method for fabricating a semiconductor deviceBEACH ROBERT·Filed 2006·Granted Dec 24, 2013·1 cites·22 claims
- 4966US7821034B2Integrated III-nitride devicesINT RECTIFIER CORP·Filed 2007·Granted Oct 26, 2010·3 cites·20 claims
- 5065US9583480B2Integrated circuit with matching threshold voltages and method for making sameEFFICIENT POWER CONV CORP·Filed 2015·Granted Feb 28, 2017·1 cites·11 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →