Inventor · disambiguated record
Shuhei Higashihara
Also filed as: HIGASHIHARA SHUHEI
12 granted patents·6 pending applications·25 citations·filing 2008–2024
85Inventor score
Top patents by PatentIndex Score
18 records- 0191US8795431B2Method for producing gallium nitride layer and seed crystal substrate used in sameNGK INSULATORS LTD·Filed 2013·Granted Aug 5, 2014·7 cites·12 claims
- 0289US8568532B2Method for growing single crystal of group III metal nitride and reaction vessel for use in sameIWAI MAKOTO·Filed 2011·Granted Oct 29, 2013·4 cites·22 claims
- 0381US10859747B2Phosphor element and illumination deviceNGK INSULATORS LTD·Filed 2019·Granted Dec 8, 2020·2 cites·13 claims
- 0480US10041186B2Method for producing nitride crystalNGK INSULATORS LTD·Filed 2016·Granted Aug 7, 2018·1 cites·6 claims
- 0576US7842133B2Single crystal growing methodNGK INSULATORS LTD·Filed 2008·Granted Nov 30, 2010·2 cites·11 claims
- 0675US7833347B2Process and apparatus for producing nitride single crystalNGK INSULATORS LTD·Filed 2008·Granted Nov 16, 2010·7 cites·2 claims
- 0767US12359341B2Bonded substrate composed of support substrate and group-13 element nitride crystal substrateNGK INSULATORS LTD·Filed 2024·Granted Jul 15, 2025·0 cites·12 claims
- 0867US8501141B2Method for producing group III nitride semiconductorSATO TAKAYUKI·Filed 2010·Granted Aug 6, 2013·2 cites·16 claims
- 0965US12436442B2Waveguide device, optical scanning device and optical modulation deviceNGK INSULATORS LTD·Filed 2024·Granted Oct 7, 2025·0 cites·8 claims
- 1064US2020411718A1Method of producing substrates including gallium nitrideNGK INSULATORS LTD·Filed 2020·Application pending·0 cites
- 1156US2019309936A1Optical componentNGK INSULATORS LTD·Filed 2019·Application pending·0 cites
- 1255US10156022B2Method for producing nitride of group-13 element, and melt compositionNGK INSULATORS LTD·Filed 2016·Granted Dec 18, 2018·0 cites·5 claims
- 1353US2014026809A1Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in SameNGK INSULATORS LTD·Filed 2013·Application pending·0 cites
- 1452US7708833B2Crystal growing apparatusTOYODA GOSEI KK·Filed 2008·Granted May 4, 2010·0 cites·20 claims
- 1551US2016300980A1Substrates Including Gallium Nitride Layers and a Method of Producing the SameNGK INSULATORS LTD·Filed 2016·Application pending·0 cites
- 1649US10190233B2Method and device for producing a group 13 element nitride crystal using a shielding objectNGK INSULATORS LTD·Filed 2017·Granted Jan 29, 2019·0 cites·11 claims
- 1749US2015303066A1Substrates Including Gallium Nitride Layers and a Method of Producing the SameNGK INSULATORS LTD·Filed 2015·Application pending·0 cites
- 1847US2011259261A1Reaction vessel for growing single crystal and method for growing single crystalNGK INSULATORS LTD·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →