Inventor · disambiguated record
Byung-Hoon Jeong
Also filed as: JEONG BYUNG-HOON
55 granted patents·4 pending applications·202 citations·filing 2002–2024
98Inventor score
Top patents by PatentIndex Score
59 records- 0198US11024400B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 1, 2021·6 cites·10 claims
- 0297US11342038B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 24, 2022·4 cites·18 claims
- 0394US10559373B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 11, 2020·9 cites·17 claims
- 0494US10482935B2Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 19, 2019·11 cites·20 claims
- 0593US11699492B2Storage system for enhancing data valid windows of signalsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 11, 2023·3 cites·18 claims
- 0693US11600539B2Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor dieSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
- 0792US10291275B2Reception interface circuits supporting multiple communication standards and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 14, 2019·12 cites·18 claims
- 0892US10205431B2Nonvolatile memory device, memory system including the same and method of operating the sameKANG DAE WOON·Filed 2017·Granted Feb 12, 2019·14 cites·19 claims
- 0991US10679717B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 9, 2020·6 cites·10 claims
- 1091US8345501B2Semiconductor memory device correcting fuse data and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·12 cites·18 claims
- 1189US11742040B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 29, 2023·1 cites·20 claims
- 1288US10824575B2Buffer device supporting training operations for a plurality of memory devices, and memory module and memory system each including the buffer deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 3, 2020·8 cites·20 claims
- 1388US10340022B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 2, 2019·8 cites·20 claims
- 1486US10937471B2Non-volatile memory device and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
- 1585US8045406B2Latency circuit using division method related to CAS latency and semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·10 cites·20 claims
- 1684US10014039B2Method and circuit for self-training of a reference voltage and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·6 cites·20 claims
- 1783US10770149B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 8, 2020·6 cites·17 claims
- 1883US2024371457A1Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1981US11062966B2Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor dieSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 13, 2021·2 cites·17 claims
- 2081US10754563B2Memory device for efficiently determining whether to perform re-training operation and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 25, 2020·6 cites·19 claims
- 2180US12073898B2Nonvolatile memory including on-die-termination circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2278US11114171B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 7, 2021·1 cites·20 claims
- 2377US10741225B2Non-volatile memory device and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 11, 2020·1 cites·20 claims
- 2476US12340867B2Memory device including on-die-termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·15 claims
- 2572US12079147B2Memory device for efficiently determining whether to perform re-training operation and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2672US10937474B2Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·2 cites·20 claims
- 2772US10916315B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 9, 2021·1 cites·20 claims
- 2871US12087370B2Storage system for enhancing data valid windows of signalsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 2971US10600454B2Non-volatile memory device and storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·2 cites·20 claims
- 3071US7675797B2CAS latency circuit and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·8 cites·25 claims
- 3171US7242232B2Internal signal replication device and methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 10, 2007·7 cites·19 claims
- 3270US11705166B2Memory device including on-die-termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·13 claims
- 3370US7486577B2Repair circuit and method of repairing defects in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·9 cites·17 claims
- 3470US7215596B2Circuit and method for controlling inversion of delay locked loop and delay locked loop and synchronous semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 8, 2007·14 cites·12 claims
- 3567US10964360B2Memory device including on-die-termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
- 3665US8294499B2Clock signal generation circuit for reducuing current consumption, and semiconductor device having the sameKWON SANG-HYUK·Filed 2010·Granted Oct 23, 2012·4 cites·5 claims
- 3762US10497412B2Method and circuit for self-training of a reference voltage and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 3, 2019·1 cites·19 claims
- 3862US10482937B2Memory devices and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 19, 2019·1 cites·20 claims
- 3961US7375564B2Time delay compensation circuit comprising delay cells having various unit time delaysSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 20, 2008·8 cites·5 claims
- 4060US11804270B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·24 claims
- 4159USRE49206ENonvolatile memory device, memory system including the same and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 6, 2022·0 cites·36 claims
- 4258US11604714B2Memory device for efficiently determining whether to perform re-training operation and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 14, 2023·0 cites·18 claims
- 4358US8230140B2Latency control circuit and method using queuing design methodJEONG BYUNG-HOON·Filed 2011·Granted Jul 24, 2012·2 cites·15 claims
- 4456US8553486B2Semiconductor memory device correcting fuse data and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Oct 8, 2013·1 cites·8 claims
- 4554US7979605B2Latency control circuit and method using queuing design methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·2 cites·21 claims
- 4653US10672436B2Memory device including on-die-termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·19 claims
- 4753US10132865B2Semiconductor chip, test system, and method of testing the semiconductor chipSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 20, 2018·0 cites·22 claims
- 4851US7110316B2Shared decoupling capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·6 cites·35 claims
- 4950US11257531B2Nonvolatile memory including duty correction circuit and storage device including the nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 22, 2022·0 cites·20 claims
- 5044US10439632B2Reference voltage generator and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →