Inventor · disambiguated record
Chihyu Su
Also filed as: SU CHIHYU
26 granted patents·1 pending application·39 citations·filing 2014–2020
93Inventor score
Top patents by PatentIndex Score
27 records- 0187US9786695B2TFT substrate structureSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Oct 10, 2017·4 cites·3 claims
- 0286US9768323B2Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2017·Granted Sep 19, 2017·4 cites·4 claims
- 0386US9589995B2TFT substrate having three parallel capacitorsSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Granted Mar 7, 2017·9 cites·11 claims
- 0484US9543442B2Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Jan 10, 2017·2 cites·6 claims
- 0582US9634032B2Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Apr 25, 2017·3 cites·7 claims
- 0681US9799677B2Structure of dual gate oxide semiconductor TFT substrateSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Oct 24, 2017·3 cites·2 claims
- 0779US10373989B2Thin-film transistor array substrate and manufacturing method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2017·Granted Aug 6, 2019·2 cites·4 claims
- 0877US9876037B2Thin-film transistor array substrate and manufacturing method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Jan 23, 2018·2 cites·11 claims
- 0977US9748285B2Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Aug 29, 2017·2 cites·11 claims
- 1074US9698172B2TFT substrate structureSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Jul 4, 2017·1 cites·2 claims
- 1171US9768202B2TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Granted Sep 19, 2017·3 cites·5 claims
- 1270US9922995B2Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gatesSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Mar 20, 2018·1 cites·4 claims
- 1366US9570620B2Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Feb 14, 2017·1 cites·7 claims
- 1463US9773851B2OLED display device comprising an insulative layer of varying thickness and manufacturing method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Sep 26, 2017·1 cites·11 claims
- 1560US9768200B2TFT backplate structure and manufacture method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Granted Sep 19, 2017·1 cites·1 claims
- 1659US9728560B2TFT substrate structureSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Aug 8, 2017·0 cites·2 claims
- 1759US9704887B2TFT substrate structureSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Jul 11, 2017·0 cites·3 claims
- 1858US10991827B2Structure of oxide thin film transistorTCL CHINA STAR OPTOELECTRONICS TECH CO LTD·Filed 2020·Granted Apr 27, 2021·0 cites·4 claims
- 1958US9786691B2TFT substrate structureSHENZHEN CHINA STAR OPTOELECT·Filed 2016·Granted Oct 10, 2017·0 cites·2 claims
- 2053US10629745B2Manufacturing method and structure of oxide thin film transistorSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Granted Apr 21, 2020·0 cites·7 claims
- 2151US9947699B2Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2017·Granted Apr 17, 2018·0 cites·4 claims
- 2244US2016027904A1Method for manufacturing coplanar oxide semiconductor tft substrateSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Application pending·0 cites
- 2340US9960195B2Method for manufacturing TFT backplane and structure of TFT backplaneSHENZHEN CHINA STAR OPTOELECT·Filed 2014·Granted May 1, 2018·0 cites·6 claims
- 2440US9601523B2Dual gate TFT substrate structure utilizing COA skillSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Mar 21, 2017·0 cites·19 claims
- 2537US10109659B2TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2017·Granted Oct 23, 2018·0 cites·6 claims
- 2637US10043829B2TFT backplate structure and manufacture method thereofSHENZHEN CHINA STAR OPTOELECT·Filed 2017·Granted Aug 7, 2018·0 cites·7 claims
- 2735US9741858B2Amorphous silicon semiconductor TFT backboard structureSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Aug 22, 2017·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →