Inventor · disambiguated record
De-Wei Yu
Also filed as: YU DE · Yu de-wei
46 granted patents·7 pending applications·110 citations·filing 2010–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD43TSAI CHUN HSIUNG4TAIWAN SEMICONDUCTOR MFG3BOE TECHNOLOGY GROUP CO LTD1FANG ZIWEI1
Top patents by PatentIndex Score
53 records- 0197US9634141B1Interlayer dielectric film in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·16 cites·20 claims
- 0295US10249530B2Interlayer dielectric film in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 2, 2019·9 cites·20 claims
- 0395US8980719B2Methods for doping fin field-effect transistorsTSAI CHUN HSIUNG·Filed 2010·Granted Mar 17, 2015·20 cites·20 claims
- 0494US11901442B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0593US10332746B1Post UV cure for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·9 cites·20 claims
- 0691US10784106B2Selective film growth for bottom-up gap fillingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·4 cites·20 claims
- 0788US10741674B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 11, 2020·2 cites·20 claims
- 0888US8877599B2Method of forming a semiconductor deviceFANG ZIWEI·Filed 2012·Granted Nov 4, 2014·8 cites·20 claims
- 0987US10115624B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·4 cites·19 claims
- 1084US9209280B2Methods for doping fin field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 8, 2015·3 cites·20 claims
- 1183US10170305B1Selective film growth for bottom-up gap fillingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·2 cites·20 claims
- 1282US10868140B2Gap-filling germanium through selective bottom-up growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 1382US10504747B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·2 cites·20 claims
- 1482US8187928B2Methods of forming integrated circuitsYu de-wei·Filed 2010·Granted May 29, 2012·8 cites·17 claims
- 1581US12183590B2Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1681US10008418B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·2 cites·20 claims
- 1781US9450097B2Methods for doping Fin field-effect transistors and Fin field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·2 cites·20 claims
- 1881US8753904B2Method and system for semiconductor device pattern loading effect characterizationTSAI CHUN HSIUNG·Filed 2012·Granted Jun 17, 2014·4 cites·20 claims
- 1980US12308369B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 2080US12283622B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 2180US10510865B2Cap layer and anneal for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·20 claims
- 2278US9874783B2Liquid crystal display substrate and preparation method thereofBOE TECHNOLOGY GROUP CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·20 claims
- 2377US11605543B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 14, 2023·0 cites·20 claims
- 2477US2025254901A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2575US10727064B2Post UV cure for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·1 cites·20 claims
- 2674US10535751B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·1 cites·20 claims
- 2774US8883522B2System for semiconductor device characterization using reflectivity measurementTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 11, 2014·2 cites·20 claims
- 2872US10347741B1Gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·1 cites·20 claims
- 2972US9482518B2Systems and methods for semiconductor device process determination using reflectivity measurementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·2 cites·20 claims
- 3070US11728406B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 3170US11107903B2Selective silicon growth for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 3270US2025227983A1Fin bending reduction through structure designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3367US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3466US11289343B2Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·0 cites·20 claims
- 3565US10861751B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 3665US10535557B2Interlayer dielectric film in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·0 cites·20 claims
- 3763US10504724B2Selective film growth for bottom-up gap fillingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 3862US12288721B2Fin bending reduction through structure designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 3962US11114545B2Cap layer and anneal for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4062US10483170B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 4161US10868137B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 4260US2025248068A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4359US9324865B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 4457US10685867B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 4556US10468501B2Gap-filling germanium through selective bottom-up growthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
- 4656US2025062139A1Furnace inner tube for process uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4755US11710777B2Semiconductor device and method for manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·0 cites·20 claims
- 4854US11677015B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 4952US11444173B2Semiconductor device structure with salicide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 13, 2022·0 cites·20 claims
- 5051US11183426B2Method for forming a FinFET structure that prevents or reduces deformation of adjacent finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →