Inventor · disambiguated record
Cheng-Po Chau
Also filed as: CHAU CHENG-PO
22 granted patents·4 pending applications·19 citations·filing 2017–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26
Top patents by PatentIndex Score
26 records- 0196US10950447B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
- 0294US11901442B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0394US11776814B2Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 0490US10504735B2Method of forming a semiconductor device by high-pressure anneal and post-anneal treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
- 0589US10714348B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·3 cites·20 claims
- 0689US10157770B2Semiconductor device having isolation structures with different thickness and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 0782US2025079162A1Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0881US12183573B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0980US12308369B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1080US12283622B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1179US11923235B2Method for forming semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1277US2025254901A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1374US11211470B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·1 cites·20 claims
- 1473US11450555B2Method for forming semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 1572US11854800B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 1670US11728406B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 1768US12183581B2Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1867US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1962US11037781B2Device and method for high pressure annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 2062US2021366715A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2161US10950490B2Semiconductor device having isolation structures with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 2261US10868137B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2360US11087987B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 2454US11677015B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 2552US11444173B2Semiconductor device structure with salicide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 13, 2022·0 cites·20 claims
- 2648US10879371B2Thermal treatment for gate dielectricsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →