Inventor · disambiguated record
Martin Bartels
Also filed as: BARTELS MARTIN
10 granted patents·6 pending applications·39 citations·filing 1987–2024
83Inventor score
Files withINFINEON TECHNOLOGIES AG8INFINEON TECHNOLOGIES DRESDEN GMBH6INFINEON TECH DRESDEN GMBH & CO KG1KABLITZ RICHARD GES1
Top patents by PatentIndex Score
16 records- 0190US7833886B2Method of producing a semiconductor element in a substrateINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 16, 2010·23 cites·44 claims
- 0282US10276494B2One time programmable memory cell and memory arrayINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 30, 2019·4 cites·14 claims
- 0380US2025089584A1Phase Change Switch with Multi Face Heater ConfigurationINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0477US12156488B2Phase change switch with multi face heater configurationINFINEON TECHNOLOGIES AG·Filed 2022·Granted Nov 26, 2024·0 cites·4 claims
- 0564US11563174B2Phase change switch with multi face heater configurationINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 24, 2023·0 cites·15 claims
- 0661US9882600B2Switching device, a communication device, and a method for processing a carrierINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 30, 2018·1 cites·18 claims
- 0754US10490642B2Semiconductor device having silicide layersINFINEON TECH DRESDEN GMBH & CO KG·Filed 2018·Granted Nov 26, 2019·0 cites·16 claims
- 0853US9941375B2Method for manufacturing a semiconductor device having silicide layersINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Apr 10, 2018·0 cites·7 claims
- 0945US9984917B2Semiconductor device with an interconnect and a method for manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 29, 2018·0 cites·25 claims
- 1044US4793471AFurnace grate structureKABLITZ RICHARD GES·Filed 1987·Granted Dec 27, 1988·11 cites·12 claims
- 1143US10804354B2Radio frequency resistor elementINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
- 1235US2016343848A1Transistor Arrangement Including Power Transistors and Voltage Limiting MeansINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
- 1335US2017012110A1Method for Filling a Trench and Semiconductor DeviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
- 1435US2017040317A1Semiconductor Device with a Laterally Varying Doping Profile, and Method for Manufacturing ThereofINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
- 1534US2017062276A1Semiconductor Device with Contact Structures Extending Through an Interlayer and Method of ManufacturingINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
- 1633US2016149032A1Power Transistor with Field-ElectrodeINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →