Inventor · disambiguated record
Zhengsheng Han
Also filed as: HAN ZHENGSHENG
5 granted patents·3 pending applications·2 citations·filing 2011–2014
62Inventor score
Files withINST OF MICROELECTRONICS CAS6THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES1WANG YIQI1
Top patents by PatentIndex Score
8 records- 0150US9536585B2SRAM storage unit based on DICE structureINST OF MICROELECTRONICS CAS·Filed 2014·Granted Jan 3, 2017·2 cites·3 claims
- 0240US9111995B2Method for improving anti-radiation performance of SOI structureINST OF MICROELECTRONICS CAS·Filed 2012·Granted Aug 18, 2015·0 cites·6 claims
- 0339US10176287B2STI stress effect modeling method and device of an MOS deviceTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2014·Granted Jan 8, 2019·0 cites·7 claims
- 0436US9626467B2SOI MOS device modeling methodINST OF MICROELECTRONICS CAS·Filed 2012·Granted Apr 18, 2017·0 cites·2 claims
- 0534US9032270B2Device and method for storing encoded and/or decoded codes by re-using encoderWANG YIQI·Filed 2011·Granted May 12, 2015·0 cites·10 claims
- 0631US2015170915A1Semiconductor structure and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
- 0731US2015177312A1Method for determining pn junction depthINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
- 0830US2014239385A1Field effect transistor and method of manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →