Inventor · disambiguated record
Yong-Hoon Son
Also filed as: SON YONG-HOON
106 granted patents·27 pending applications·2,060 citations·filing 2003–2022
99Inventor score
Top patents by PatentIndex Score
133 records- 0199US7679133B2Vertical-type non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 16, 2010·873 cites·6 claims
- 0298US8053829B2Methods of fabricating nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·208 cites·3 claims
- 0398US7074662B2Methods for fabricating fin field effect transistors using a protective layer to reduce etching damageSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·176 cites·43 claims
- 0497US11502086B2Semiconductor memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·20 claims
- 0597US8236650B2Vertical-type non-volatile memory devices and methods of manufacturing the sameSON YONG-HOON·Filed 2010·Granted Aug 7, 2012·27 cites·13 claims
- 0696US11417659B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·18 claims
- 0796US10418374B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·16 cites·20 claims
- 0896US8063438B2Vertical-type semiconductor devicesSON YONG-HOON·Filed 2009·Granted Nov 22, 2011·30 cites·12 claims
- 0996US7320908B2Methods of forming semiconductor devices having buried oxide patternsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·34 cites·14 claims
- 1096US7141856B2Multi-structured Si-finSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·104 cites·10 claims
- 1195US8592873B2Semiconductor memory devices and methods of forming the sameKIM JUNG HO·Filed 2011·Granted Nov 26, 2013·24 cites·14 claims
- 1295US8163616B2Methods of manufacturing nonvolatile memory devicesKANG PIL-KYU·Filed 2011·Granted Apr 24, 2012·31 cites·5 claims
- 1394US9997534B2Vertical memory devicesSON YONG HOON·Filed 2016·Granted Jun 12, 2018·14 cites·19 claims
- 1494US8492828B2Vertical-type non-volatile memory devicesSON YONG-HOON·Filed 2012·Granted Jul 23, 2013·15 cites·20 claims
- 1594US8450176B2Methods of manufacturing rewriteable three-dimensional semiconductor memory devicesSON YONG-HOON·Filed 2010·Granted May 28, 2013·24 cites·14 claims
- 1694US7534686B2Multi-structured Si-fin and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·26 cites·15 claims
- 1793US11871558B2Semiconductor memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·1 cites·20 claims
- 1893US11335685B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 17, 2022·7 cites·20 claims
- 1993US9997538B2Semiconductor device including channel structureSON YONG HOON·Filed 2017·Granted Jun 12, 2018·10 cites·20 claims
- 2092US9893077B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·12 claims
- 2192US8236673B2Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materialsSON YONG-HOON·Filed 2011·Granted Aug 7, 2012·14 cites·20 claims
- 2291US10971516B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 6, 2021·9 cites·20 claims
- 2391US9356033B2Three-dimensional semiconductor memory devices and methods of forming the sameSON YONG-HOON·Filed 2015·Granted May 31, 2016·7 cites·16 claims
- 2491US9070581B2Vertical-type semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 30, 2015·6 cites·11 claims
- 2591US8923057B2Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrateSON YONG-HOON·Filed 2010·Granted Dec 30, 2014·13 cites·17 claims
- 2691US8482049B2Semiconductor devices and methods for fabricating the sameSON YONG-HOON·Filed 2010·Granted Jul 9, 2013·23 cites·24 claims
- 2791US8304318B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSON YONG-HOON·Filed 2011·Granted Nov 6, 2012·9 cites·10 claims
- 2891US7998851B2Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·11 cites·20 claims
- 2990US7071048B2Methods of fabricating fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 4, 2006·40 cites·20 claims
- 3089US10804289B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·9 cites·20 claims
- 3189US10553582B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 4, 2020·6 cites·20 claims
- 3289US10431595B1Memory devices having vertically extending channel structures thereinSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 1, 2019·6 cites·20 claims
- 3389US9929179B2Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the sameSON YONG HOON·Filed 2017·Granted Mar 27, 2018·5 cites·20 claims
- 3489US9905568B2Nonvolatile memory device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 3589US7537980B2Method of manufacturing a stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 26, 2009·14 cites·22 claims
- 3688US11348924B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 3788US8039350B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·9 cites·22 claims
- 3888US7122871B2Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·35 cites·13 claims
- 3987US7521301B2Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·10 cites·12 claims
- 4087US7432173B2Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline filmSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 7, 2008·14 cites·33 claims
- 4187US7394117B2Fin field effect transistors including epitaxial finsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 1, 2008·9 cites·13 claims
- 4286US11462554B2Three-dimensional semiconductor memory device with concave convex separation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·18 claims
- 4386US9716181B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 25, 2017·7 cites·20 claims
- 4486US7642589B2Fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·9 cites·6 claims
- 4585US10971521B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 6, 2021·2 cites·20 claims
- 4685US10109642B2Vertical-type semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 23, 2018·2 cites·16 claims
- 4784US8980731B2Methods of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 17, 2015·6 cites·20 claims
- 4884US8455316B2Method of manufacturing vertical semiconductor deviceSON YONG-HOON·Filed 2011·Granted Jun 4, 2013·6 cites·18 claims
- 4984US7141116B2Method for manufacturing a silicon structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 28, 2006·5 cites·21 claims
- 5083US8373165B2Semiconductor integrated circuit device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Feb 12, 2013·4 cites·5 claims
Showing the top 50 of 133 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →