Inventor · disambiguated record
Hideo Namita
Also filed as: NAMITA HIDEO
12 granted patents·2 pending applications·8 citations·filing 2015–2023
85Inventor score
Files withMITSUBISHI CHEM CORP14
Top patents by PatentIndex Score
14 records- 0190US10301743B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2017·Granted May 28, 2019·5 cites·15 claims
- 0284US10903072B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Jan 26, 2021·1 cites·18 claims
- 0380US2024105449A1CONDUCTIVE C-PLANE GaN SUBSTRATEMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 0478US10796904B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Oct 6, 2020·1 cites·18 claims
- 0577US10995421B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2019·Granted May 4, 2021·0 cites·9 claims
- 0674US10720326B2Method for growing GaN crystal and C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Jul 21, 2020·1 cites·21 claims
- 0773US11810782B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Nov 7, 2023·0 cites·25 claims
- 0872US10309038B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2017·Granted Jun 4, 2019·0 cites·13 claims
- 0971US11591715B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Feb 28, 2023·0 cites·13 claims
- 1066US11404268B2Method for growing GaN crystal and c-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 1166US9890474B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2015·Granted Feb 13, 2018·0 cites·19 claims
- 1261US11001940B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2018·Granted May 11, 2021·0 cites·22 claims
- 1360US11236439B2Non-polar or semi-polar GaN waferMITSUBISHI CHEM CORP·Filed 2019·Granted Feb 1, 2022·0 cites·8 claims
- 1449US2018142376A1NON-POLAR OR SEMI-POLAR GaN WAFERMITSUBISHI CHEM CORP·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →