Inventor · disambiguated record
Tae Mochizuki
Also filed as: MOCHIZUKI TAE
15 granted patents·2 pending applications·25 citations·filing 2016–2025
90Inventor score
Technology areasH10P
Files withMITSUBISHI CHEM CORP17
Top patents by PatentIndex Score
17 records- 0195US11987903B2N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2021·Granted May 21, 2024·3 cites·19 claims
- 0294US12351943B2n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2024·Granted Jul 8, 2025·1 cites·23 claims
- 0391US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0491US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0590US10301743B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2017·Granted May 28, 2019·5 cites·15 claims
- 0689US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0787US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0884US10903072B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Jan 26, 2021·1 cites·18 claims
- 0983US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 1081US2025290228A1n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHODMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 1180US2024105449A1CONDUCTIVE C-PLANE GaN SUBSTRATEMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 1278US10796904B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Oct 6, 2020·1 cites·18 claims
- 1374US10720326B2Method for growing GaN crystal and C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Jul 21, 2020·1 cites·21 claims
- 1473US11810782B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Nov 7, 2023·0 cites·25 claims
- 1571US11591715B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Feb 28, 2023·0 cites·13 claims
- 1666US11404268B2Method for growing GaN crystal and c-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 1761US11001940B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2018·Granted May 11, 2021·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →