Inventor · disambiguated record
Bruno Spuler
Also filed as: SPULER BRUNO
13 granted patents·318 citations·filing 1996–2002
93Inventor score
Files withSIEMENS AG5IBM2INFINEON TECHNOLOGIES AG2INFINEON TECHNOLOGIES SC3002INFINEON TECHNOLOGIES CORP1
Top patents by PatentIndex Score
13 records- 0175US6379869B1Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterningINFINEON TECHNOLOGIES AG·Filed 1999·Granted Apr 30, 2002·36 cites·25 claims
- 0274US5976986ALow pressure and low power C12 /HC1 process for sub-micron metal etchingIBM·Filed 1996·Granted Nov 2, 1999·50 cites·13 claims
- 0373US6177353B1Metallization etching techniques for reducing post-etch corrosion of metal linesINFINEON TECHNOLOGIES CORP·Filed 1998·Granted Jan 23, 2001·52 cites·15 claims
- 0472US6521542B1Method for forming dual damascene structureIBM·Filed 2000·Granted Feb 18, 2003·24 cites·20 claims
- 0567US5874363APolycide etching with HCL and chlorineTOSHIBA KK·Filed 1996·Granted Feb 23, 1999·35 cites·10 claims
- 0667US5846884AMethods for metal etching with reduced sidewall build up during integrated circuit manufacturingSIEMENS AG·Filed 1997·Granted Dec 8, 1998·34 cites·21 claims
- 0765US5854126AMethod for forming metallization in semiconductor devices with a self-planarizing materialSIEMENS AG·Filed 1997·Granted Dec 29, 1998·30 cites·3 claims
- 0858US6593254B2Method for clamping a semiconductor device in a manufacturing processINFINEON TECHNOLOGIES SC300·Filed 2002·Granted Jul 15, 2003·9 cites·9 claims
- 0957US5935873ADeposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etchingSIEMENS AG·Filed 1997·Granted Aug 10, 1999·21 cites·22 claims
- 1056US6033984ADual damascene with bond padsSIEMENS AG·Filed 1997·Granted Mar 7, 2000·22 cites·17 claims
- 1148US6984556B2Method of forming an isolation layer and method of manufacturing a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 10, 2006·3 cites·15 claims
- 1243US6784553B2Semiconductor device with self-aligned contact and method for manufacturing the deviceINFINEON TECHNOLOGIES SC300·Filed 2002·Granted Aug 31, 2004·2 cites·6 claims
- 1330US6071820AMethod for patterning integrated circuit conductorsSIEMENS AG·Filed 1997·Granted Jun 6, 2000·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →