Inventor · disambiguated record
Hwi-Huang Chen
Also filed as: CHEN HWI-HUANG
30 granted patents·7 pending applications·514 citations·filing 1994–2023
97Inventor score
Files withUNITED MICROELECTRONICS CORP19HUANG CHAO-YUAN6IPENVAL CONSULTANT INC3POWERCHIP SEMICONDUCTOR MFG CORP3UNITED SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
37 records- 0190US6396745B1Vertical two-transistor flash memoryUNITED MICROELECTRONICS CORP·Filed 2001·Granted May 28, 2002·86 cites·19 claims
- 0290US6211012B1Method of fabricating an ETOX flash memoryUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 3, 2001·49 cites·30 claims
- 0388US8890607B2Stacked chip systemHUANG CHAO-YUAN·Filed 2013·Granted Nov 18, 2014·12 cites·16 claims
- 0488US5445984AMethod of making a split gate flash memory cellUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 29, 1995·57 cites·22 claims
- 0586US7244975B2High-voltage device structureUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jul 17, 2007·15 cites·10 claims
- 0686US5614746AStructure and process of manufacture of split gate flash memory cellUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 25, 1997·49 cites·18 claims
- 0782US6436751B1Fabrication method and structure of a flash memoryUNITED MICROELECTRONICS CORP·Filed 2001·Granted Aug 20, 2002·37 cites·20 claims
- 0877US7485925B2High voltage metal oxide semiconductor transistor and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2005·Granted Feb 3, 2009·7 cites·15 claims
- 0970US8952500B2Semiconductor deviceIPENVAL CONSULTANT INC·Filed 2013·Granted Feb 10, 2015·3 cites·15 claims
- 1070US5700708AProcess for fabricating storage capacitor for DRAM memory cellUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 23, 1997·28 cites·12 claims
- 1168US5422292AProcess for fabricating split gate flash EEPROM memoryUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jun 6, 1995·26 cites·6 claims
- 1266US9030025B2Integrated circuit layoutHUANG CHAO-YUAN·Filed 2013·Granted May 12, 2015·2 cites·20 claims
- 1364US12396190B2GaN device with N2 pre-treatment and method of performing N2 pre-treatmentPOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2023·Granted Aug 19, 2025·0 cites·12 claims
- 1462US6017796AMethod of fabricating flash electrically-erasable and programmable read-only memory (EEPROM) deviceUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Jan 25, 2000·21 cites·22 claims
- 1558US12389657B2High electron mobility transistor device and manufacturing method thereofPOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1657US6235582B1Method for forming flash memory cellUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 22, 2001·16 cites·10 claims
- 1757US6232183B1Method for fabricating a flash memoryUNITED MICROELECTRONICS CROP·Filed 1999·Granted May 15, 2001·17 cites·13 claims
- 1856US12471350B2Semiconductor structure and method of forming the samePOWERCHIP SEMICONDUCTOR MFG CORP·Filed 2022·Granted Nov 11, 2025·0 cites·10 claims
- 1954US5882970AMethod for fabricating flash memory cell having a decreased overlapped region between its source and gateUNITED MICROELECTRONICS CORP·Filed 1995·Granted Mar 16, 1999·15 cites·11 claims
- 2052US6757198B2Method for operating a non-volatile memoryUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jun 29, 2004·7 cites·22 claims
- 2152US6077763AProcess for fabricating a self-aligned contactUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jun 20, 2000·18 cites·8 claims
- 2252US5899718AMethod for fabricating flash memory cellsUNITED SEMICONDUCTOR CORP·Filed 1997·Granted May 4, 1999·13 cites·12 claims
- 2350US6294428B1Method of forming a flash memory deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 25, 2001·12 cites·5 claims
- 2443US8853090B1Method for fabricating a through-silicon viaIPENVAL CONSULTANT INC·Filed 2013·Granted Oct 7, 2014·0 cites·20 claims
- 2542US5646056AMethod of fabricating ultra-large-scale integration metal-oxide semiconductor field effect transistorUNITED MICROELECTRONICS CORP·Filed 1995·Granted Jul 8, 1997·8 cites·10 claims
- 2640US2014264913A1Semiconductor DeviceHUANG CHAO-YUAN·Filed 2013·Application pending·0 cites
- 2740US2014264915A1Stacked Integrated Circuit SystemHUANG CHAO-YUAN·Filed 2013·Application pending·0 cites
- 2840US2014264630A1Integrated StructureHUANG CHAO-YUAN·Filed 2013·Application pending·0 cites
- 2940US2014264869A1Semiconductor DeviceHUANG CHAO-YUAN·Filed 2013·Application pending·0 cites
- 3039US5851872AMethod of fabricating dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1996·Granted Dec 22, 1998·5 cites·16 claims
- 3139US5506167AMethod of making a high resistance drain junction resistor in a SRAMUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 9, 1996·7 cites·6 claims
- 3239US2014264917A1A Semiconductor Device with a Through-Silicon Via and a Method for Making the SameIPENVAL CONSULTANT INC·Filed 2013·Application pending·0 cites
- 3336US6096624AMethod for forming ETOX cell using self-aligned source etching processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 1, 2000·3 cites·10 claims
- 3436US2009179256A1Memory having separated charge trap spacers and method of forming the sameLIN SUNG-BIN·Filed 2008·Application pending·0 cites
- 3532US6268241B1Method of forming a self-aligned silicide structure in integrated circuit fabricationUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 31, 2001·1 cites·12 claims
- 3632US2003107921A1Method for operating a non-volatile memoryFiled 2002·Application pending·0 cites
- 3727US8420488B2Method of fabricating high voltage deviceMA YUN-HAN·Filed 2007·Granted Apr 16, 2013·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →